Fabrication of large-scale alpha-si3n4 nanotubes on si(111) by hot-wall chernical-vapor-deposition with the assistance of ga2o3
文献类型:期刊论文
作者 | Wei, QQ; Xue, CS; Sun, ZC; Zhuang, HZ; Cao, WT; Wang, SY; Dong, ZH |
刊名 | Applied surface science
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出版日期 | 2004-05-15 |
卷号 | 229期号:1-4页码:9-12 |
关键词 | Hot-wall cvd Alpha-si3n4 Nanotubes Nano-material |
ISSN号 | 0169-4332 |
DOI | 10.1016/j.apsusc.2004.01.058 |
通讯作者 | Wei, qq(wqq0503@hotmail.com) |
英文摘要 | Large-scale alpha-si3n4 nanotubes, were synthesized on si(l 1 1) by hot-wall chemical-vapor-deposition (cvd) with the assistance of ga2o3. the cylindrical structures were as long as 30 um with the inside diameters ranging between 20 and 60 nm and the outside diameters ranging between 40 and 100 nm. scanning electron microscope (sem), x-ray diffraction (xrd), transmission electron microscope (tem) and high-resolution tem (hrtem) were used to characterize the size, composition and the structure of the samples. (c) 2004 published by elsevier b.v. |
WOS关键词 | CARBON NANOTUBE ; NANOWIRES ; BORON |
WOS研究方向 | Chemistry ; Materials Science ; Physics |
WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
语种 | 英语 |
WOS记录号 | WOS:000221680100003 |
出版者 | ELSEVIER SCIENCE BV |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429443 |
专题 | 半导体研究所 |
通讯作者 | Wei, QQ |
作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
推荐引用方式 GB/T 7714 | Wei, QQ,Xue, CS,Sun, ZC,et al. Fabrication of large-scale alpha-si3n4 nanotubes on si(111) by hot-wall chernical-vapor-deposition with the assistance of ga2o3[J]. Applied surface science,2004,229(1-4):9-12. |
APA | Wei, QQ.,Xue, CS.,Sun, ZC.,Zhuang, HZ.,Cao, WT.,...&Dong, ZH.(2004).Fabrication of large-scale alpha-si3n4 nanotubes on si(111) by hot-wall chernical-vapor-deposition with the assistance of ga2o3.Applied surface science,229(1-4),9-12. |
MLA | Wei, QQ,et al."Fabrication of large-scale alpha-si3n4 nanotubes on si(111) by hot-wall chernical-vapor-deposition with the assistance of ga2o3".Applied surface science 229.1-4(2004):9-12. |
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来源:半导体研究所
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