中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication of large-scale alpha-si3n4 nanotubes on si(111) by hot-wall chernical-vapor-deposition with the assistance of ga2o3

文献类型:期刊论文

作者Wei, QQ; Xue, CS; Sun, ZC; Zhuang, HZ; Cao, WT; Wang, SY; Dong, ZH
刊名Applied surface science
出版日期2004-05-15
卷号229期号:1-4页码:9-12
关键词Hot-wall cvd Alpha-si3n4 Nanotubes Nano-material
ISSN号0169-4332
DOI10.1016/j.apsusc.2004.01.058
通讯作者Wei, qq(wqq0503@hotmail.com)
英文摘要Large-scale alpha-si3n4 nanotubes, were synthesized on si(l 1 1) by hot-wall chemical-vapor-deposition (cvd) with the assistance of ga2o3. the cylindrical structures were as long as 30 um with the inside diameters ranging between 20 and 60 nm and the outside diameters ranging between 40 and 100 nm. scanning electron microscope (sem), x-ray diffraction (xrd), transmission electron microscope (tem) and high-resolution tem (hrtem) were used to characterize the size, composition and the structure of the samples. (c) 2004 published by elsevier b.v.
WOS关键词CARBON NANOTUBE ; NANOWIRES ; BORON
WOS研究方向Chemistry ; Materials Science ; Physics
WOS类目Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000221680100003
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2429443
专题半导体研究所
通讯作者Wei, QQ
作者单位Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式
GB/T 7714
Wei, QQ,Xue, CS,Sun, ZC,et al. Fabrication of large-scale alpha-si3n4 nanotubes on si(111) by hot-wall chernical-vapor-deposition with the assistance of ga2o3[J]. Applied surface science,2004,229(1-4):9-12.
APA Wei, QQ.,Xue, CS.,Sun, ZC.,Zhuang, HZ.,Cao, WT.,...&Dong, ZH.(2004).Fabrication of large-scale alpha-si3n4 nanotubes on si(111) by hot-wall chernical-vapor-deposition with the assistance of ga2o3.Applied surface science,229(1-4),9-12.
MLA Wei, QQ,et al."Fabrication of large-scale alpha-si3n4 nanotubes on si(111) by hot-wall chernical-vapor-deposition with the assistance of ga2o3".Applied surface science 229.1-4(2004):9-12.

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来源:半导体研究所

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