Preferred growth of nanocrystalline silicon in boron-doped nc-si : h films
文献类型：期刊论文
| 作者 | Wei, WS; Wang, TM; Zhang, CX; Li, GH; Han, HX; Ding, K |
| 刊名 | Vacuum
 |
| 出版日期 | 2004-05-03 |
| 卷号 | 74期号:1页码:69-75 |
| 关键词 | Hydrogenated nanocrystalline silicon film Boron-doped Nanocrystalline silicon Preferred growth electric field |
| ISSN号 | 0042-207X |
| DOI | 10.1016/j.vacuum.2003.11.008 |
| 通讯作者 | Wei, ws(weiwensheng287@sohu.com) |
| 英文摘要 | Preferred growth of nanocrystalline silicon (nc-si) was first found in boron-doped hydrogenated nanocrystalline (nc-si:h) films prepared using plasma-enhanced chemical vapor deposition system. the films were characterized by high-resolution transmission electron microscope, x-ray diffraction (xrd) spectrum and raman scattering spectrum. the results showed that the diffraction peaks in xrd spectrum were at 2theta approximate to 47degrees and the exponent of crystalline plane of nc-si in the film was (220). a considerable reason was electric field derived from dc bias made the bonds of si-si array according to a certain orient. the size and crystalline volume fraction of nc-si in boron-doped films were intensively depended on the deposited parameters: diborane (b2h6) doping ratio in silane (sih4), silane dilution ratio in hydrogen (h-2), rf power density, substrate's temperature and reactive pressure, respectively. but preferred growth of nc-si in the boron-doped nc-si:h films cannot be obtained by changing these parameters. (c) 2004 elsevier ltd. all rights reserved. |
| WOS关键词 | MICROCRYSTALLINE SILICON ; MECHANISM ; PHASE |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000221206800007 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429444 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wei, WS |
| 作者单位 | 1.Beihang Univ, Ctr Mat Phys & Chem, Sch Sci, Beijing 100083, Peoples R China 2.Beihang Univ, Inst Optoelect Technol, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Natl Lab Semicond Superlattice & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, WS,Wang, TM,Zhang, CX,et al. Preferred growth of nanocrystalline silicon in boron-doped nc-si : h films[J]. Vacuum,2004,74(1):69-75. |
| APA | Wei, WS,Wang, TM,Zhang, CX,Li, GH,Han, HX,&Ding, K.(2004).Preferred growth of nanocrystalline silicon in boron-doped nc-si : h films.Vacuum,74(1),69-75. |
| MLA | Wei, WS,et al."Preferred growth of nanocrystalline silicon in boron-doped nc-si : h films".Vacuum 74.1(2004):69-75. |
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来源：半导体研究所
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