Nonradiative recombination centers in ga(as,n) and their annealing behavior studied by raman spectroscopy
文献类型：期刊论文
| 作者 | Ramsteiner, M; Jiang, DS; Harris, JS; Ploog, KH |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2004-03-15 |
| 卷号 | 84期号:11页码:1859-1861 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.1687465 |
| 通讯作者 | Ramsteiner, m(mer@pdi-berlin.de) |
| 英文摘要 | Nitrogen-related defects in diluted ga(as,n) have been detected by raman scattering in resonance with the localized e+ transition. these defects are attributed to local vibrational modes of nitrogen dimers on ga- and as-lattice sites. rapid thermal annealing under appropriate conditions is found to be able to remove the nitrogen dimers. the required minimum annealing temperature coincides with the threshold-like onset of strong, near-band-gap photoluminescence. this finding suggests that the nitrogen dimers are connected with nonradiative recombination centers. (c) 2004 american institute of physics. |
| WOS关键词 | 1.3 MU-M ; GAASN ALLOYS ; BAND-GAP ; NITROGEN ; SCATTERING ; GAINNAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000220182600015 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429448 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ramsteiner, M |
| 作者单位 | 1.Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany 2.Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China 3.Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA |
| 推荐引用方式 GB/T 7714 | Ramsteiner, M,Jiang, DS,Harris, JS,et al. Nonradiative recombination centers in ga(as,n) and their annealing behavior studied by raman spectroscopy[J]. Applied physics letters,2004,84(11):1859-1861. |
| APA | Ramsteiner, M,Jiang, DS,Harris, JS,&Ploog, KH.(2004).Nonradiative recombination centers in ga(as,n) and their annealing behavior studied by raman spectroscopy.Applied physics letters,84(11),1859-1861. |
| MLA | Ramsteiner, M,et al."Nonradiative recombination centers in ga(as,n) and their annealing behavior studied by raman spectroscopy".Applied physics letters 84.11(2004):1859-1861. |
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来源：半导体研究所
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