Synthesis and structural properties of gan powders
文献类型：期刊论文
| 作者 | Xiao, HD; Ma, HL; Xue, CS; Ma, J; Zong, FJ; Zhang, XJ; Ji, F; Hu, WR |
| 刊名 | Materials chemistry and physics
 |
| 出版日期 | 2004-11-15 |
| 卷号 | 88期号:1页码:180-184 |
| 关键词 | Gan powder Synthesis Xrd Xps Sem Tem |
| ISSN号 | 0254-0584 |
| DOI | 10.1016/j.matchemphys.2004.07.004 |
| 通讯作者 | Ma, hl(hlma@sdu.edu.cn) |
| 英文摘要 | Gallium nitride(gan) powders have been synthesized by nitriding beta-ga2o3 powders in the flow of nh3 gas at a nitridation temperature of 950degreesc for 35 min. x-ray powder diffraction (xrd) reveals that the synthesized gan is of a single-phase wurtzite structure with lattice constants a = 3.191 angstrom. and c = 5.192 angstrom. transmission electron microscopy (tem) also indicates that gan particle is a single crystal. x-ray photo-electron spectroscopy (xps) confirms the formation of bonding between ga and n, and yields the surface stoichiometry of ga:n of 1:1. the morphology of gan particles examined by scanning electron microscopy (sem) is ruileless. (c) 2004 elsevier b.v. all rights reserved. |
| WOS关键词 | GALLIUM NITRIDE ; CRYSTAL-GROWTH ; EPITAXY |
| WOS研究方向 | Materials Science |
| WOS类目 | Materials Science, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000224370900030 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429451 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ma, HL |
| 作者单位 | 1.Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China 2.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xiao, HD,Ma, HL,Xue, CS,et al. Synthesis and structural properties of gan powders[J]. Materials chemistry and physics,2004,88(1):180-184. |
| APA | Xiao, HD.,Ma, HL.,Xue, CS.,Ma, J.,Zong, FJ.,...&Hu, WR.(2004).Synthesis and structural properties of gan powders.Materials chemistry and physics,88(1),180-184. |
| MLA | Xiao, HD,et al."Synthesis and structural properties of gan powders".Materials chemistry and physics 88.1(2004):180-184. |
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来源：半导体研究所
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