Fexsi grown with mass-analyzed low-energy dual ion beam deposition
文献类型：期刊论文
| 作者 | Liu, LF; Chen, NF; Zhang, FQ; Chen, CL; Li, YL; Yang, SY; Liu, Z |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-03-01 |
| 卷号 | 263期号:1-4页码:143-147 |
| 关键词 | Auger electron spectroscopy X-ray diffraction Ion beam deposition Semiconducting silicon |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2003.11.092 |
| 通讯作者 | Liu, lf(lfliu@red.semi.ac.cn) |
| 英文摘要 | Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick fexsi films. x-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesc. there are no new phases formed. carrier concentration depth profile of annealed sample was measured by electrochemical c-v method and indicated that fexsi film shows n-type conductivity while silicon substrate is p-type. the p-n junction is formed between fexsi film and silicon substrate showing rectifying effect. (c) 2003 elsevier b.v. all rights reserved. |
| WOS关键词 | DOPED SI-MN ; SPIN-PHOTONICS ; THIN-FILMS ; SILICON ; GAS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000220184400023 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429458 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, LF |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Mech, Natl Lab Micrograv, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, LF,Chen, NF,Zhang, FQ,et al. Fexsi grown with mass-analyzed low-energy dual ion beam deposition[J]. Journal of crystal growth,2004,263(1-4):143-147. |
| APA | Liu, LF.,Chen, NF.,Zhang, FQ.,Chen, CL.,Li, YL.,...&Liu, Z.(2004).Fexsi grown with mass-analyzed low-energy dual ion beam deposition.Journal of crystal growth,263(1-4),143-147. |
| MLA | Liu, LF,et al."Fexsi grown with mass-analyzed low-energy dual ion beam deposition".Journal of crystal growth 263.1-4(2004):143-147. |
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来源：半导体研究所
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