中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Long-wavelength sige/si mqw resonant-cavity-enhanced photodiodes (rce-pd)

文献类型:期刊论文

作者Yu, JZ; Li, C; Cheng, BW; Wang, QM
刊名Gettering and defect engineering in semiconductor technology
出版日期2004
卷号95-96页码:255-260
关键词Dbr (distributed bragg reflector) Mqw (multiple quantum wells) Optical fiber communication Photodiode Rce-pd (resonant-cavity-enhanced photodiode) Responsivity Sige/si Soi
ISSN号1012-0394
通讯作者Yu, jz(jzyu@red.semi.ac.cn)
英文摘要Si1-xgex/si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. sige/si mqw rce-pd (resonant-cavity-enhanced photodiodes) with different structures were investigated in this work. design and fabrication of top- and bottom-incident rce-pd, such as growth of sige mqw (multiple quantum wells) on si and soi (si on insulator) wafers, bonding between sige epitaxial wafer and sor (surface optical reflector) consisting of sio2/si dbr (distributed bragg reflector) films on si, and performances of rce-pd, were presented. the responsivity of 44ma/w at 1.314 mum and the fwhm of 6nm were obtained at bias of 10v. the highest external quantum efficiency measured in the investigation is 4.2%.
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000189347700037
出版者TRANS TECH PUBLICATIONS LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2429462
专题半导体研究所
通讯作者Yu, JZ
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Yu, JZ,Li, C,Cheng, BW,et al. Long-wavelength sige/si mqw resonant-cavity-enhanced photodiodes (rce-pd)[J]. Gettering and defect engineering in semiconductor technology,2004,95-96:255-260.
APA Yu, JZ,Li, C,Cheng, BW,&Wang, QM.(2004).Long-wavelength sige/si mqw resonant-cavity-enhanced photodiodes (rce-pd).Gettering and defect engineering in semiconductor technology,95-96,255-260.
MLA Yu, JZ,et al."Long-wavelength sige/si mqw resonant-cavity-enhanced photodiodes (rce-pd)".Gettering and defect engineering in semiconductor technology 95-96(2004):255-260.

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来源:半导体研究所

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