Size self-scaling effect in stacked inas/inalas nanowire multilayers
文献类型：期刊论文
| 作者 | Sun, ZZ; Yoon, SF; Wu, J; Wang, ZG |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2004-11-22 |
| 卷号 | 85期号:21页码:5061-5063 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.1818335 |
| 通讯作者 | Yoon, sf() |
| 英文摘要 | Size self-scaling effect in stacked inas/in0.52al0.48as nanowires on inp substrates is revealed, i.e., the base width and height of the inas nanowires have clear proportional dependence on thickness of the inalas spacer layer used in different samples. the photoluminescence wavelength from different samples, which varies between 1.3 and 1.9 mum, is also found closely correlated to the size self-scaling effect. this phenomenon can be well explained in the context of formation mechanism and growth features of the inas/inalas nanowire arrays. the finding illustrates a degree of freedom to control the structural and optical properties of strained self-organized nanostructures. (c) 2004 american institute of physics. |
| WOS关键词 | INAS QUANTUM WIRES ; LAYER-ORDERING ORIENTATION ; ORGANIZED GROWTH ; INP(001) ; ISLANDS ; DOTS ; GAAS ; SUPERLATTICES ; RELAXATION ; SITU |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000225300600078 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429463 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yoon, SF |
| 作者单位 | 1.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, ZZ,Yoon, SF,Wu, J,et al. Size self-scaling effect in stacked inas/inalas nanowire multilayers[J]. Applied physics letters,2004,85(21):5061-5063. |
| APA | Sun, ZZ,Yoon, SF,Wu, J,&Wang, ZG.(2004).Size self-scaling effect in stacked inas/inalas nanowire multilayers.Applied physics letters,85(21),5061-5063. |
| MLA | Sun, ZZ,et al."Size self-scaling effect in stacked inas/inalas nanowire multilayers".Applied physics letters 85.21(2004):5061-5063. |
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来源：半导体研究所
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