(ga, gd, as) film growth on gaas substrate by low-energy ion-beam deposit
文献类型：期刊论文
| 作者 | Song, SL; Chen, NF; Zhou, JP; Li, YL; Chai, CL; Yang, SY; Liu, ZK |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-01-09 |
| 卷号 | 260期号:3-4页码:451-455 |
| 关键词 | Auger electron spectroscopy X-ray diffraction Ion-beam epitaxy Gadolinium compounds |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2003.08.058 |
| 通讯作者 | Song, sl() |
| 英文摘要 | (ga, gd, as) film was fabricated by the mass-analyzed dual ion-beam epitaxy system with the energy of 1000 ev at room temperature. there was no new peak found except gaas substrate peaks (0 0 2) and (0 0 4) by x-ray diffraction. rocking curves were measured for symmetric (0 0 4) reflections to further yield the lattice mismatch information by employing double-crystal x-ray diffraction. the element distributions vary so much due to the ion dose difference from aes depth profiles. the sample surface morphology indicates oxidizing layer roughness is also relative to the gd ion dose, which leads to islandlike feature appearing on the high-dose sample. one sample shows ferromagnetic behavior at room temperature. (c) 2003 elsevier b.v. all rights reserved. |
| WOS关键词 | METAL-INSULATOR-TRANSITION ; EPITAXY |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000187781300027 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429464 |
| 专题 | 半导体研究所 |
| 通讯作者 | Song, SL |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Mech, Natl Micrograv Lab, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Song, SL,Chen, NF,Zhou, JP,et al. (ga, gd, as) film growth on gaas substrate by low-energy ion-beam deposit[J]. Journal of crystal growth,2004,260(3-4):451-455. |
| APA | Song, SL.,Chen, NF.,Zhou, JP.,Li, YL.,Chai, CL.,...&Liu, ZK.(2004).(ga, gd, as) film growth on gaas substrate by low-energy ion-beam deposit.Journal of crystal growth,260(3-4),451-455. |
| MLA | Song, SL,et al."(ga, gd, as) film growth on gaas substrate by low-energy ion-beam deposit".Journal of crystal growth 260.3-4(2004):451-455. |
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来源：半导体研究所
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