The fabrication and properties of inas/gaas columnal islands
文献类型:期刊论文
作者 | Zhu, TW; Bo, X; Jun, H; Zhao, FA; Zhang, CL; Xie, EQ; Liu, FQ; Wang, ZG |
刊名 | Acta physica sinica
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出版日期 | 2004 |
卷号 | 53期号:1页码:301-305 |
关键词 | Inas/gaas columnal islands Growth interruption Space layer Pl spectra |
ISSN号 | 1000-3290 |
通讯作者 | Zhu, tw(zhutw@red.semi.ac.cn) |
英文摘要 | A columnal islands system, which was composed of three layers of self-assembled inas/gaas quantum dots (qds), has been fabricated by solid-source molecular beam epitaxy (mbe) through s-k mode on a (100) semi-insulating gaas substrate. the effects of the thickness of gaas space layer, the growth interruption time and the amount of inas deposition on the emission wavelength of columnal islands were presented. the image of atomic force microscopy (afm) indicated the columnal islands with high uniformity in size and shape. at room temperature, the emission wavelength of columnal islands with different effective heights was achieved 1.32 and 1.4 mum; however, the emission wavelength of single-layer qds with normal height was just 1. l mum. it provides a useful and intuitive approach to artificially control the emission wavelength of a qd material system. |
WOS关键词 | ASSEMBLED QUANTUM DOTS ; MU-M ; PHOTOLUMINESCENCE ; GAAS ; SIZE |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000188285500057 |
出版者 | CHINESE PHYSICAL SOC |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429467 |
专题 | 半导体研究所 |
通讯作者 | Zhu, TW |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semiconductor Mat Sci, Beijing 100083, Peoples R China 2.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China |
推荐引用方式 GB/T 7714 | Zhu, TW,Bo, X,Jun, H,et al. The fabrication and properties of inas/gaas columnal islands[J]. Acta physica sinica,2004,53(1):301-305. |
APA | Zhu, TW.,Bo, X.,Jun, H.,Zhao, FA.,Zhang, CL.,...&Wang, ZG.(2004).The fabrication and properties of inas/gaas columnal islands.Acta physica sinica,53(1),301-305. |
MLA | Zhu, TW,et al."The fabrication and properties of inas/gaas columnal islands".Acta physica sinica 53.1(2004):301-305. |
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来源:半导体研究所
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