Enhanced performance of AlN SAW devices with wave propagation along the 〈11?20〉 direction on c-plane sapphire substrate
文献类型：期刊论文
| 作者 | Ai,Yujie1; Yang,Shuai1,2; Cheng,Zhe1; Zhang,Lian1; Jia,Lifang1; Dong,Boyu3; Wang,Junxi1,2; Zhang,Yun1,2 |
| 刊名 | Journal of Physics D: Applied Physics
 |
| 出版日期 | 2019-03-19 |
| 卷号 | 52期号:21 |
| 关键词 | AlN film surface acoustic wave propagation direction quality factor insertion loss elastic constant |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/1361-6463/ab0bf6 |
| 英文摘要 | Abstract This paper investigates the effect of acoustic wave propagation direction along the a-direction (〈11?20〉) and m-direction (〈1?100〉) on the frequency responses of c-plane AlN based surface acoustic wave (SAW) devices systematically. The experimental results indicate that the resonant frequency (), quality factor (Q), electromechanical coupling coefficient (), insertion loss and out-of-band rejection can be improved for the a-direction compared with the m-direction of an AlN based SAW resonator on sapphire. The Q is 1347 for a one-port SAW resonator along the a-direction, and the minimum insertion loss is 8.71 dB for a two-port SAW resonator along the a-direction. The insertion loss is 3.23 dB lower for the a-direction compared to the m-direction of the AlN film, which may be attributed to the larger acoustic power flow density. The is 45% higher for the a-direction compared to the m-direction of the AlN film, which may be attributed to the larger elastic constant. In addition, our finite element model simulation results reveal the C11 and C44 for the m-direction are 345?GPa and 102?GPa, while C11 and C44 for the a-direction is increased to 429?GPa and 128?GPa, respectively. Our work demonstrates that the a-direction is better than the m-direction of the AlN film for high performance SAW device applications. |
| 语种 | 英语 |
| WOS记录号 | IOP:0022-3727-52-21-ab0bf6 |
| 出版者 | IOP Publishing |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429471 |
| 专题 | 半导体研究所 |
| 作者单位 | 1.Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China 2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China 3.NAURA Technology Group Co., Ltd, No.8 Wenchang Avenue Beijing Economic-Technological Development Area, Beijing 100176, People’s Republic of China |
| 推荐引用方式 GB/T 7714 | Ai,Yujie,Yang,Shuai,Cheng,Zhe,等. Enhanced performance of AlN SAW devices with wave propagation along the 〈11?20〉 direction on c-plane sapphire substrate[J]. Journal of Physics D: Applied Physics,2019,52(21). |
| APA | Ai,Yujie.,Yang,Shuai.,Cheng,Zhe.,Zhang,Lian.,Jia,Lifang.,...&Zhang,Yun.(2019).Enhanced performance of AlN SAW devices with wave propagation along the 〈11?20〉 direction on c-plane sapphire substrate.Journal of Physics D: Applied Physics,52(21). |
| MLA | Ai,Yujie,et al."Enhanced performance of AlN SAW devices with wave propagation along the 〈11?20〉 direction on c-plane sapphire substrate".Journal of Physics D: Applied Physics 52.21(2019). |
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来源：半导体研究所
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