Defects coupling impacts on mono-layer wse2 tunneling field-effect transistors
文献类型：期刊论文
| 作者 | Wu,Jixuan1,2; Ma,Xiaolei1,2; Chen,Jiezhi1; Jiang,Xiangwei2 |
| 刊名 | Applied physics express
 |
| 出版日期 | 2019-02-05 |
| 卷号 | 12期号:3 |
| ISSN号 | 1882-0778 |
| DOI | 10.7567/1882-0786/ab00ea |
| 通讯作者 | Chen,jiezhi() ; Jiang,xiangwei() |
| 英文摘要 | Abstract for comprehensive understanding of the impacts of atomic defects in mono-layer transition-metal dichalcogenides (tmds), defects coupling phenomenon are systematically studied in this work through ab initio calculations, by focusing on the device transmission characteristics in mono-layer wse2 tunneling field-effect transistors (tfets). it is found that, although a single se vacancy (vse) or single w vacancy (vw) defect in the channel decreases the device performance significantly, this degradation can be well suppressed with defects coupling. our results strongly indicate that defects could be well designed to obtain high performance tmds tfets. |
| 语种 | 英语 |
| 出版者 | IOP Publishing |
| WOS记录号 | IOP:1882-0778-12-3-AB00EA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429474 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen,Jiezhi; Jiang,Xiangwei |
| 作者单位 | 1.School of Information Science and Engineering, Shandong University, Qingdao, People’s Republic of China 2.State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People’s Republic of China |
| 推荐引用方式 GB/T 7714 | Wu,Jixuan,Ma,Xiaolei,Chen,Jiezhi,et al. Defects coupling impacts on mono-layer wse2 tunneling field-effect transistors[J]. Applied physics express,2019,12(3). |
| APA | Wu,Jixuan,Ma,Xiaolei,Chen,Jiezhi,&Jiang,Xiangwei.(2019).Defects coupling impacts on mono-layer wse2 tunneling field-effect transistors.Applied physics express,12(3). |
| MLA | Wu,Jixuan,et al."Defects coupling impacts on mono-layer wse2 tunneling field-effect transistors".Applied physics express 12.3(2019). |
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来源：半导体研究所
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