Metamaterials absorber based on doped semiconductor for thz and fir frequency ranges
文献类型：期刊论文
| 作者 | Chen,Miao1,2; Yan,Wei1; Tong,Xin1,2; Zeng,Liuwen1,2; Li,Zhaofeng1,2,3; Yang,Fuhua1,2,3,4 |
| 刊名 | Journal of optics
 |
| 出版日期 | 2019-02-07 |
| 卷号 | 21期号:3 |
| ISSN号 | 2040-8978 |
| 关键词 | Metamaterials Subwavelength structure Absorber |
| DOI | 10.1088/2040-8986/ab00d8 |
| 英文摘要 | Abstract in this paper, we propose a metamaterials absorber for terahertz and far infrared frequency ranges. the elementary absorber structure consists of one dielectric layer stacked on one doped semiconductor layer without structure patterning. the ideal permittivity of the doped semiconductor layer for achieving perfect absorption is derived based on the impedance transformation method. since the permittivity of the doped semiconductor can be tuned by doping, the impedance matching condition can be met at the desired frequency range. the simulation results show that the absorption reaches 97% at the impedance matching point. furthermore, a broadband absorber can be formed by adding one pair of patterned dielectric-doped semiconductor layers on top of the elementary absorber structure. the average absorption of the broadband absorber reaches 95% from 8 thz to 14 thz. the proposed design, which is flexible and compatible with semiconductor technology, may find its applications in fields such as terahertz detection, imaging and bioanalytics. |
| 语种 | 英语 |
| 出版者 | IOP Publishing |
| WOS记录号 | IOP:2040-8978-21-3-AB00D8 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429475 |
| 专题 | 半导体研究所 |
| 作者单位 | 1.Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China 2.School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China 3.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China 4.State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China |
| 推荐引用方式 GB/T 7714 | Chen,Miao,Yan,Wei,Tong,Xin,et al. Metamaterials absorber based on doped semiconductor for thz and fir frequency ranges[J]. Journal of optics,2019,21(3). |
| APA | Chen,Miao,Yan,Wei,Tong,Xin,Zeng,Liuwen,Li,Zhaofeng,&Yang,Fuhua.(2019).Metamaterials absorber based on doped semiconductor for thz and fir frequency ranges.Journal of optics,21(3). |
| MLA | Chen,Miao,et al."Metamaterials absorber based on doped semiconductor for thz and fir frequency ranges".Journal of optics 21.3(2019). |
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来源：半导体研究所
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