Impact of device parameters on performance of one-port type saw resonators on aln/sapphire
文献类型：期刊论文
| 作者 | Yang,Shuai1,2; Ai,Yujie1,2; Zhang,Yun1,2; Cheng,Zhe1,2; Zhang,Lian1,2; Jia,Lifang1,2; Dong,Boyu3; Zhang,Baohui3; Wang,Junxi1,2 |
| 刊名 | Journal of micromechanics and microengineering
 |
| 出版日期 | 2018-05-08 |
| 卷号 | 28期号:8 |
| 关键词 | Surface acoustic wave Aln films Device parameters Electromechanical coupling coefficient Interdigital transducers |
| ISSN号 | 0960-1317 |
| DOI | 10.1088/1361-6439/aabc87 |
| 英文摘要 | Abstract we have studied the impact of various device parameters including surface acoustic wavelength (λ), interdigital transducers (idt) finger apertures (lidt), number of reflector gratings (nref), and reflector types on the performance of one-port type aln based saw resonators on sapphire systematically. experimental results indicate that the acoustic velocity of 1 μm-aln/sapphire bilayer structure is 5536 m s?1, 60% higher than that of linbo3 when λ is 8 μm. for 1 μm-aln/sapphire bilayer structure, resonators with λ of 8 μm exhibit better performance than that of resonators with λ of 12 μm and 16 μm, with an electromechanical coupling coefficient () of 0.168%, and s11 magnitude difference at resonant and anti-resonant frequency (δs11) of 0.42 db. both δs11 and of resonators will increase sharply with the increase of lidt from 80 μm to 240 μm, exhibiting 140% and 150% improvement, respectively. the of resonators will increase 38% with the increase of nref from 100 to 300. the impact of reflector types including open-circuited and short-circuited reflectors on performance of resonators is not obvious. |
| 语种 | 英语 |
| WOS记录号 | IOP:0960-1317-28-8-AABC87 |
| 出版者 | IOP Publishing |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429478 |
| 专题 | 半导体研究所 |
| 作者单位 | 1.Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China 2.University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China 3.NAURA Technology Group Co., Ltd, Beijing 100176, People’s Republic of China |
| 推荐引用方式 GB/T 7714 | Yang,Shuai,Ai,Yujie,Zhang,Yun,et al. Impact of device parameters on performance of one-port type saw resonators on aln/sapphire[J]. Journal of micromechanics and microengineering,2018,28(8). |
| APA | Yang,Shuai.,Ai,Yujie.,Zhang,Yun.,Cheng,Zhe.,Zhang,Lian.,...&Wang,Junxi.(2018).Impact of device parameters on performance of one-port type saw resonators on aln/sapphire.Journal of micromechanics and microengineering,28(8). |
| MLA | Yang,Shuai,et al."Impact of device parameters on performance of one-port type saw resonators on aln/sapphire".Journal of micromechanics and microengineering 28.8(2018). |
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来源：半导体研究所
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