Barrier tunneling of the loop-nodal semimetal in the hyperhoneycomb lattice
文献类型：期刊论文
| 作者 | Guan,Ji-Huan1,2,3; Zhang,Yan-Yang1,3,4; Lu,Wei-Er5,6; Xia,Yang4,5; Li,Shu-Shen1,3,7 |
| 刊名 | Journal of physics: condensed matter
 |
| 出版日期 | 2018-04-12 |
| 卷号 | 30期号:18 |
| ISSN号 | 0953-8984 |
| 关键词 | Quantum tunneling Loop-nodal semimetal Dirac equation |
| DOI | 10.1088/1361-648x/aab8dc |
| 英文摘要 | Abstract we theoretically investigate the barrier tunneling in the 3d model of the hyperhoneycomb lattice, which is a nodal-line semimetal with a dirac loop at zero energy. in the presence of a rectangular potential, the scattering amplitudes for different injecting states around the nodal loop are calculated, by using analytical treatments of the effective model, as well as numerical simulations of the tight binding model. in the low energy regime, states with remarkable transmissions are only concentrated in a small range around the loop plane. when the momentum of the injecting electron is coplanar with the nodal loop, nearly perfect transmissions can occur for a large range of injecting azimuthal angles if the potential is not high. for higher potential energies, the transmission shows a resonant oscillation with the potential, but still with peaks being perfect transmissions that do not decay with the potential width. these strikingly robust transports of the loop-nodal semimetal can be approximately explained by a momentum dependent dirac hamiltonian. |
| 语种 | 英语 |
| 出版者 | IOP Publishing |
| WOS记录号 | IOP:0953-8984-30-18-AAB8DC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429483 |
| 专题 | 半导体研究所 |
| 作者单位 | 1.SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People’s Republic of China 2.School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 101408, People’s Republic of China 3.Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China 4.School of Microelectronics, University of Chinese Academy of Sciences, Beijing 101408, People’s Republic of China 5.Microelectronic Instrument and Equipment Research Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China 6.Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China 7.College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, People’s Republic of China |
| 推荐引用方式 GB/T 7714 | Guan,Ji-Huan,Zhang,Yan-Yang,Lu,Wei-Er,et al. Barrier tunneling of the loop-nodal semimetal in the hyperhoneycomb lattice[J]. Journal of physics: condensed matter,2018,30(18). |
| APA | Guan,Ji-Huan,Zhang,Yan-Yang,Lu,Wei-Er,Xia,Yang,&Li,Shu-Shen.(2018).Barrier tunneling of the loop-nodal semimetal in the hyperhoneycomb lattice.Journal of physics: condensed matter,30(18). |
| MLA | Guan,Ji-Huan,et al."Barrier tunneling of the loop-nodal semimetal in the hyperhoneycomb lattice".Journal of physics: condensed matter 30.18(2018). |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。