Computational understanding of the structural and electronic properties of the GeS-graphene contact
文献类型：期刊论文
| 作者 | Zhao, Jinfeng2; Liang, Yan1; Chen, Hong1; Huang, Jindou3 |
| 刊名 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS
 |
| 出版日期 | 2019-04-14 |
| 卷号 | 21期号:14页码:7447-7453 |
| ISSN号 | 1463-9076 |
| DOI | 10.1039/c9cp00374f |
| 通讯作者 | Zhao, Jinfeng(jfzhao@dicp.ac.cn) ; Huang, Jindou(jindouhuang@dicp.ac.cn) |
| 英文摘要 | Two-dimensional (2D) metal-semiconductor junctions have shown significant potential for nanoelectronic and optoelectronic applications. Herein, the structural and electronic properties of a germanium monosulfide/graphene (GeS/G) van der Waals (vdW) heterostructure were explored using first-principles calculations. It was discovered that the structural rigidity and mechanical anisotropy of GeS could be significantly improved by loading graphene. In addition, the intrinsic characteristics of the atomic layer GeS and graphene were well preserved, and the formation of a p-type Schottky contact in the equilibrium state was demonstrated; moreover, the Schottky barrier height of the interface was sensitive to the external condition and could be reduced to zero via applying normal strain or a perpendicular electric field. These insightful results pave the way for experimental research and the design of other 2D nanomaterial-based electronic and optoelectronic devices. |
| WOS关键词 | BLACK PHOSPHORUS ; MONOLAYER ; FIELD ; MOS2 ; SEMICONDUCTOR ; SCHOTTKY ; HETEROSTRUCTURES ; STRAIN |
| 资助项目 | National Natural Science foundation of China[11604333] |
| WOS研究方向 | Chemistry ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000464580600019 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 资助机构 | National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China |
| 源URL | [http://cas-ir.dicp.ac.cn/handle/321008/165552]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 通讯作者 | Zhao, Jinfeng; Huang, Jindou |
| 作者单位 | 1.Shandong Univ, Sch Chem & Chem Engn, Sch Phys, Shandanan Str 27, Jinan 250100, Shandong, Peoples R China 2.Chinese Acad Sci, State Key Lab Mol React Dynam, Dalian Inst Chem Phys, Dalian 116023, Peoples R China 3.Dalian Nationalities Univ, Sch Phys & Mat Engn, Dalian 116600, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Jinfeng,Liang, Yan,Chen, Hong,et al. Computational understanding of the structural and electronic properties of the GeS-graphene contact[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2019,21(14):7447-7453. |
| APA | Zhao, Jinfeng,Liang, Yan,Chen, Hong,&Huang, Jindou.(2019).Computational understanding of the structural and electronic properties of the GeS-graphene contact.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,21(14),7447-7453. |
| MLA | Zhao, Jinfeng,et al."Computational understanding of the structural and electronic properties of the GeS-graphene contact".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 21.14(2019):7447-7453. |
入库方式： OAI收割
来源：大连化学物理研究所
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