中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Realizing p-Type MoS2 with Enhanced Thermoelectric Performance by Embedding VMo2S4 Nanoinclusions

文献类型:期刊论文

作者Kong, Shuang1,3; Wu, Tianmin2,4; Zhuang, Wei2; Jiang, Peng1; Bao, Xinhe1
刊名JOURNAL OF PHYSICAL CHEMISTRY B
出版日期2018-01-18
卷号122期号:2页码:713-720
ISSN号1520-6106
DOI10.1021/acs.jpcb.7b06379
文献子类Article
英文摘要Two-dimensional transition-metal dichalcogenide semiconductors (TMDCs) such as MoS2 are attracting increasing interest as thermoelectric materials owing to their abundance, nontoxicity, and promising performance. Recently, we have successfully developed n-type MoS2 thermoelectric material via oxygen doping. Nevertheless, an efficient thermoelectric module requires both n-type and p-type materials with similar compatibility factors. Here, we present a facile approach to obtain a p-type MoS2 thermoelectric material with a maximum figure of merit of 0.18 through the introduction of VMo2S4 as a second phase by vanadium doping. VMo2S4 nanoinclusions, confirmed by X-ray powder diffraction (XRD) and transmission electron microscopy (TEM) measurements, not only improve the electrical conductivity by simultaneously increasing the carrier concentration and the mobility but also result in the reduction of lattice thermal conductivity by enhancing the interface phonon scattering. Our studies not only shed new light toward improving thermoelectric performance of TMDCs by a facile elemental doping strategy but also pave the way toward thermoelectric devices based on TMDCs.
WOS关键词BISMUTH-ANTIMONY TELLURIDE ; THERMAL-CONDUCTIVITY ; MOLYBDENUM-DISULFIDE ; CARRIER MOBILITY ; MONOLAYER MOS2 ; BULK ; NANOCOMPOSITES ; CRYSTAL ; COMPOSITES ; POWER
WOS研究方向Chemistry
语种英语
WOS记录号WOS:000423140600039
出版者AMER CHEMICAL SOC
源URL[http://cas-ir.dicp.ac.cn/handle/321008/168620]  
专题大连化学物理研究所_中国科学院大连化学物理研究所
通讯作者Zhuang, Wei; Jiang, Peng; Bao, Xinhe
作者单位1.Chinese Acad Sci, Dalian Inst Chem Phys, CAS Ctr Excellence Nanosci, State Key Lab Catalysis, Dalian 116023, Liaoning, Peoples R China
2.Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
4.Univ Sci & Technol China, Dept Chem Phys, Hefei 230026, Anhui, Peoples R China
推荐引用方式
GB/T 7714
Kong, Shuang,Wu, Tianmin,Zhuang, Wei,et al. Realizing p-Type MoS2 with Enhanced Thermoelectric Performance by Embedding VMo2S4 Nanoinclusions[J]. JOURNAL OF PHYSICAL CHEMISTRY B,2018,122(2):713-720.
APA Kong, Shuang,Wu, Tianmin,Zhuang, Wei,Jiang, Peng,&Bao, Xinhe.(2018).Realizing p-Type MoS2 with Enhanced Thermoelectric Performance by Embedding VMo2S4 Nanoinclusions.JOURNAL OF PHYSICAL CHEMISTRY B,122(2),713-720.
MLA Kong, Shuang,et al."Realizing p-Type MoS2 with Enhanced Thermoelectric Performance by Embedding VMo2S4 Nanoinclusions".JOURNAL OF PHYSICAL CHEMISTRY B 122.2(2018):713-720.

入库方式: OAI收割

来源:大连化学物理研究所

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