Study on the Properties of 1319 nm Ultra-High Reflector Deposited by Electron Beam Evaporation Assisted by an Energetic RF Ion Source
文献类型：期刊论文
| 作者 | Deng, Songwen; Li, Gang; Wang, Feng; Lv, Qipeng; Sun, Long; Jin, Yuqi |
| 刊名 | COATINGS
 |
| 出版日期 | 2018-02-01 |
| 卷号 | 8期号:2 |
| 关键词 | Electron Beam Evaporation Ultra-high Reflector Ion Source |
| ISSN号 | 2079-6412 |
| DOI | 10.3390/coatings8020074 |
| 文献子类 | Article |
| 英文摘要 | Ultra-high reflectors, working as a critical optical component, has been widely applied as a cavity mirror in fine optical systems such as laser gyro, F-P interferometer, etc. For decades, ion beam sputtering (IBS) technology, which can deposit ultra-low loss and dense layers, has been commonly believed to be the only and irreplaceable method to fabricate ultra-high reflectors. Thus, reports on other methods are rare and a reflectivity above 99.99% obtained by evaporation technology (including ion assisted evaporation) has not been seen yet. In the present study, an energetic radio frequency (RF) ion source was introduced during the electron beam evaporation process, which improved the layer quality dramatically. An ultra-high reflector at 1319 nm with reflectivity of 99.992% (measured by cavity-ring down method) was successfully deposited on a phi 100 mm x 25 mm single crystal silicon substrate whose surface roughness was approximately 0.420 nm. The surface figure of the reflector was accurately controlled superior to 1/6 lambda (lambda = 632.8 nm). The measured absorption was approximately 3-5 ppm and the calculated scatter based on surface roughness measurement was approximately 6.64 ppm. Total loss of the reflector was systematically discussed. This study showed that it is possible to apply electron beam evaporation in ultra-high reflector manufacture and the method is capable of depositing reflectors with an aperture larger than phi 600 mm which is the maximum capacity of current IBS technology. |
| WOS关键词 | INTERFEROMETER ; LASER |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000427513800029 |
| 出版者 | MDPI |
| 源URL | [http://cas-ir.dicp.ac.cn/handle/321008/168948]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 通讯作者 | Deng, Songwen |
| 作者单位 | Chinese Acad Sci, Dalian Inst Chem Phys, Key Lab Chem Lasers, Dalian 116023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Deng, Songwen,Li, Gang,Wang, Feng,et al. Study on the Properties of 1319 nm Ultra-High Reflector Deposited by Electron Beam Evaporation Assisted by an Energetic RF Ion Source[J]. COATINGS,2018,8(2). |
| APA | Deng, Songwen,Li, Gang,Wang, Feng,Lv, Qipeng,Sun, Long,&Jin, Yuqi.(2018).Study on the Properties of 1319 nm Ultra-High Reflector Deposited by Electron Beam Evaporation Assisted by an Energetic RF Ion Source.COATINGS,8(2). |
| MLA | Deng, Songwen,et al."Study on the Properties of 1319 nm Ultra-High Reflector Deposited by Electron Beam Evaporation Assisted by an Energetic RF Ion Source".COATINGS 8.2(2018). |
入库方式： OAI收割
来源：大连化学物理研究所
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