Quality evaluation of homopetaxial 4H-SiC thin films by a Raman scattering study of forbidden modes
文献类型：期刊论文
| 作者 | Feng, Zhaochi5; Feng, Zhe Chuan3; Wan, Lingyu3; Zhao, Dishu3; Wang, Fangze3; Xu, Gu1,3; Lin, Tao3; Tin, Chin-Che2,4 |
| 刊名 | OPTICAL MATERIALS EXPRESS
 |
| 出版日期 | 2018 |
| 卷号 | 8期号:1页码:119-127 |
| ISSN号 | 2159-3930 |
| DOI | 10.1364/OME.8.000119 |
| 文献子类 | Article |
| 英文摘要 | The crystal quality of a 4H-silicon carbide (4H-SiC) epitaxial layer is crucial to the development of high-performance 4H-SiC-based electronic power devices. However, the quality assessment of 4H-SiC homoepitaxial thin film is problematic because the same bulk material interferes with the probe of the epilayer. In this paper, we propose a simple and straightforward strategy to assess the quality of a homoepilayer using ultraviolet (UV) Raman spectroscopy (RS). Rather than focusing on the normally allowed modes, we shift our attention to the forbidden modes instead. We demonstrate that forbidden modes, which were usually ignored, are more sensitive to the crystalline imperfection and can be an effective quality probe. Our approach analyzes the crystal quality swiftly, without the need for the data fitting involved in the conventional method, and therefore makes the quality assessment much more efficient. The new method may also be applied to the other thin film materials. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; SILICON-CARBIDE ; SPECTROSCOPY ; HETEROSTRUCTURES ; EPILAYERS ; BULK |
| WOS研究方向 | Materials Science ; Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000419099400014 |
| 出版者 | OPTICAL SOC AMER |
| 源URL | [http://cas-ir.dicp.ac.cn/handle/321008/169192]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 通讯作者 | Wan, Lingyu |
| 作者单位 | 1.McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L7, Canada 2.Tunku Abdul Rahman Univ Coll, Dept Mat Engn, Kuala Lumpur 53300, Malaysia 3.Guangxi Univ, Sch Phys Sci & Technol, Lab Optoelect Mat & Detect Technol, Guangxi Key Lab Relativist Astrophys, Nanning 530004, Peoples R China 4.Auburn Univ, Dept Phys, Auburn, AL 36849 USA 5.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, POB 110, Dalian 116023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Feng, Zhaochi,Feng, Zhe Chuan,Wan, Lingyu,et al. Quality evaluation of homopetaxial 4H-SiC thin films by a Raman scattering study of forbidden modes[J]. OPTICAL MATERIALS EXPRESS,2018,8(1):119-127. |
| APA | Feng, Zhaochi.,Feng, Zhe Chuan.,Wan, Lingyu.,Zhao, Dishu.,Wang, Fangze.,...&Tin, Chin-Che.(2018).Quality evaluation of homopetaxial 4H-SiC thin films by a Raman scattering study of forbidden modes.OPTICAL MATERIALS EXPRESS,8(1),119-127. |
| MLA | Feng, Zhaochi,et al."Quality evaluation of homopetaxial 4H-SiC thin films by a Raman scattering study of forbidden modes".OPTICAL MATERIALS EXPRESS 8.1(2018):119-127. |
入库方式： OAI收割
来源：大连化学物理研究所
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