Bottom-Up Fabrication of Sulfur-Doped Graphene Films Derived from Sulfur-Annulated Nanographene for Ultrahigh Volumetric Capacitance Micro-Supercapacitors
文献类型:期刊论文
作者 | Muellen, Klaus9; Wu, Zhong-Shuai1; Tan, Yun-Zhi2,3; Zheng, Shuanghao1,4,5; Wang, Sen1,5; Parvez, Khaled6; Qin, Jieqiong1,5; Shi, Xiaoyu1,4; Sun, Chenglin1,5; Bao, Xinhe1,4 |
刊名 | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
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出版日期 | 2017-03-29 |
卷号 | 139期号:12页码:4506-4512 |
ISSN号 | 0002-7863 |
DOI | 10.1021/jacs.7b00805 |
文献子类 | Article |
英文摘要 | Heteroatom doping of nanoc- arbon films can efficiently boost the pseudocapacitance of micro-supercapacitors (MSCs); however, wafer-scale fabrication of sulfur-doped graphene films with a tailored thickness and homogeneous doping for MSCs remains a great challenge. Here we demonstrate the bottom-up fabrication of continuous, uniform, and ultrathin sulfur-doped graphene (SG) films, derived from the peripherical trisulfur-annulated hexa-peri-hexabenzocoronene (SHBC), for ultrahigh rate MSCs (SG-MSCs) with landmark volumetric capacitance. The SG filrn was prepared by thermal annealing of the spray-coated SHBC-based film, with assistance of a thin Au protecting layer, at 800 degrees C for 30 min. SHBC with 12 phenylthio groups decorated at the periphery is critical as a precursor for the formation of the continuous and ultrathin SG film, with a uniform thickness of similar to 10.0 nm. Notably, the as-produced all-solid-state planar SG-MSCs exhibited a highly stable pseudocapacitive behavior with a volumetric capacitance of similar to 582 F cm(-3) at 10 mV s(-1), excellent rate capability with a remarkable capacitance of 8.1 F cm(-3) even at an ultrahigh rate of 2000 V s(-1), ultrafast frequency response with a short time constant of 0.26 ms, and ultrahigh power density of similar to 1191 W cm(-3). It is noteworthy that these values obtained are among the best values for carbon-based MSCs reported to date. |
WOS关键词 | OXYGEN REDUCTION REACTION ; METAL-FREE ELECTROCATALYSTS ; LINE-FILTERING PERFORMANCE ; ENERGY-STORAGE ; CARBON-FILMS ; ON-CHIP ; FLEXIBLE ELECTRONICS ; EDGE CHLORINATION ; MESOPOROUS CARBON ; ACTIVATED CARBON |
WOS研究方向 | Chemistry |
语种 | 英语 |
WOS记录号 | WOS:000398247100047 |
出版者 | AMER CHEMICAL SOC |
源URL | [http://cas-ir.dicp.ac.cn/handle/321008/169424] ![]() |
专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
通讯作者 | Muellen, Klaus; Wu, Zhong-Shuai; Feng, Xinliang |
作者单位 | 1.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy, 4S7 Zhongshan Rd, Dalian 116023, Peoples R China 2.Xiamen Univ, Coll Chem & Chem Engn, State Key Lab Phys Chem Solid Surfaces, 422 Siming South Rd, Xiamen 361005, Peoples R China 3.Xiamen Univ, Coll Chem & Chem Engn, Dept Chem, 422 Siming South Rd, Xiamen 361005, Peoples R China 4.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, 4S7 Zhongshan Rd, Dalian 116023, Peoples R China 5.Univ Chinese Acad Sci, 19 A Yuquan Rd, Beijing 100049, Peoples R China 6.Univ Manchester, Sch Chem, Oxford Rd, Manchester M13 9PL, Lancs, England 7.Tech Univ Dresden, Ctr Adv Elect Dresden Cfaed, Mommsenstr 4, D-01062 Dresden, Germany 8.Tech Univ Dresden, Dept Chem & Food Chem, Mommsenstr 4, D-01062 Dresden, Germany 9.Max Planck Inst Polymer Res, Ackermannweg 10, D-55128 Mainz, Germany |
推荐引用方式 GB/T 7714 | Muellen, Klaus,Wu, Zhong-Shuai,Tan, Yun-Zhi,et al. Bottom-Up Fabrication of Sulfur-Doped Graphene Films Derived from Sulfur-Annulated Nanographene for Ultrahigh Volumetric Capacitance Micro-Supercapacitors[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2017,139(12):4506-4512. |
APA | Muellen, Klaus.,Wu, Zhong-Shuai.,Tan, Yun-Zhi.,Zheng, Shuanghao.,Wang, Sen.,...&Feng, Xinliang.(2017).Bottom-Up Fabrication of Sulfur-Doped Graphene Films Derived from Sulfur-Annulated Nanographene for Ultrahigh Volumetric Capacitance Micro-Supercapacitors.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,139(12),4506-4512. |
MLA | Muellen, Klaus,et al."Bottom-Up Fabrication of Sulfur-Doped Graphene Films Derived from Sulfur-Annulated Nanographene for Ultrahigh Volumetric Capacitance Micro-Supercapacitors".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 139.12(2017):4506-4512. |
入库方式: OAI收割
来源:大连化学物理研究所
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