H-2-Ar dilution for improved c-Si quantum dots in P-doped SiNx:H thin film matrix
文献类型：期刊论文
| 作者 | Liu, Jia1; Zhang, Weijia2; Liu, Shengzhong (Frank)1,3 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2017-02-28 |
| 卷号 | 396页码:235-242 |
| 关键词 | C-si Quantum Dot Sinx:h Thin Film Phosphorus-doping Pecvd |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2016.10.082 |
| 文献子类 | Article |
| 英文摘要 | Phosphorus-doped hydrogenated silicon nitride (SiNx:H) thin films containing crystalline silicon quantum dot (c-Si QD) was prepared by plasma enhanced chemical vapor deposition (PECVD) using hydrogen-argon mixed dilution. The effects of H-2/Ar flow ratio on the structural, electrical and optical characteristics of as-grown P-doped SiNx:H thin films were systematically investigated. Experimental results show that crystallization is promoted by increasing the H-2/Ar flow ratio in dilution, while the N/Si atomic ratio is higher for thin film deposited with argon-rich dilution. As the H-2/Ar flow ratio varies from 100/100 to 200/0, the samples exhibit excellent conductivity owing to the large volume fraction of c-Si QDs and effective P-doping. By adjusting the H-2/Ar ratio to 100/100, P-doped SiNx:H thin film containing tiny and densely distributed c-Si QDs can be obtained. It simultaneously possesses wide optical band gap and high dark conductivity. Finally, detailed discussion has been made to analyze the influence of H-2-Ar mixed dilution on the properties of P-doped SiNx:H thin films. (C) 2016 Elsevier B.V. All rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; RAY PHOTOELECTRON-SPECTROSCOPY ; SIO2/SI3N4 HYBRID MATRIX ; PHOTOVOLTAIC SOLAR-CELLS ; NANOCRYSTALLINE SILICON ; ULTRAVIOLET ELLIPSOMETRY ; OPTICAL-ABSORPTION ; MICRO-RAMAN ; NITRIDE ; PLASMA |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000396223500029 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://cas-ir.dicp.ac.cn/handle/321008/169500]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 通讯作者 | Zhang, Weijia; Liu, Shengzhong (Frank) |
| 作者单位 | 1.Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China 2.Beihang Univ, Sch Phys & Nucl Energy Engn, Ctr Condensed Matter & Mat Phys, Beijing 100191, Peoples R China 3.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, iChEM,Dalian Natl Lab Clean Energy, Dalian 116023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Jia,Zhang, Weijia,Liu, Shengzhong . H-2-Ar dilution for improved c-Si quantum dots in P-doped SiNx:H thin film matrix[J]. APPLIED SURFACE SCIENCE,2017,396:235-242. |
| APA | Liu, Jia,Zhang, Weijia,&Liu, Shengzhong .(2017).H-2-Ar dilution for improved c-Si quantum dots in P-doped SiNx:H thin film matrix.APPLIED SURFACE SCIENCE,396,235-242. |
| MLA | Liu, Jia,et al."H-2-Ar dilution for improved c-Si quantum dots in P-doped SiNx:H thin film matrix".APPLIED SURFACE SCIENCE 396(2017):235-242. |
入库方式： OAI收割
来源：大连化学物理研究所
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