Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition
文献类型：期刊论文
| 作者 | Bao, Xinhe1,2; Liu, Hengchang1,2,3,4; Zhu, Yuanhu2; Meng, Qinglong2; Lu, Xiaowei2; Kong, Shuang2; Huang, Zhiwei2; Jiang, Peng2 |
| 刊名 | NANO RESEARCH
 |
| 出版日期 | 2017-02-01 |
| 卷号 | 10期号:2页码:643-651 |
| 关键词 | Mos2 Monolayer Carrier Gas Flow Rate Modified Cvd |
| ISSN号 | 1998-0124 |
| DOI | 10.1007/s12274-016-1323-3 |
| 文献子类 | Article |
| 英文摘要 | Monolayer molybdenum disulfide (MoS2) has attracted much attention because of the variety of potential applications. However, its controlled growth is still a great challenge. Here, we report a modified chemical vapor deposition method to grow monolayer MoS2. We observed that the quality of the MoS2 crystals could be greatly improved by tuning the carrier gas flow rate during the heating stage. This subtle modification prevents the uncontrollable reaction between the precursors, a critical factor for the growth of high-quality monolayer MoS2. Based on an optimized gas flow rate, the MoS2 coverage and flake size can be controlled by adjusting the growth time. |
| WOS关键词 | MONO LAYER MOS2 ; HIGH-QUALITY MONOLAYER ; LARGE-AREA ; ATOMIC LAYERS ; MOLYBDENUM-DISULFIDE ; SINGLE-CRYSTALLINE ; OPTICAL-PROPERTIES ; PHASE GROWTH ; THIN-LAYERS ; AU FOILS |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000394322300024 |
| 出版者 | TSINGHUA UNIV PRESS |
| 源URL | [http://cas-ir.dicp.ac.cn/handle/321008/169628]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 通讯作者 | Zhu, Yuanhu |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Adv Res Inst, 99 Hi Tech Pk, Shanghai 200120, Peoples R China 2.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, 457 Zhongshan Rd, Dalian 116023, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100039, Peoples R China 4.ShanghaiTech Univ, 100 Haike Rd, Shanghai 201210, Peoples R China |
| 推荐引用方式 GB/T 7714 | Bao, Xinhe,Liu, Hengchang,Zhu, Yuanhu,et al. Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition[J]. NANO RESEARCH,2017,10(2):643-651. |
| APA | Bao, Xinhe.,Liu, Hengchang.,Zhu, Yuanhu.,Meng, Qinglong.,Lu, Xiaowei.,...&Jiang, Peng.(2017).Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition.NANO RESEARCH,10(2),643-651. |
| MLA | Bao, Xinhe,et al."Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition".NANO RESEARCH 10.2(2017):643-651. |
入库方式： OAI收割
来源：大连化学物理研究所
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