Deep UV resonance Raman spectroscopic study on electron-phonon coupling in hexagonal III-nitride wide bandgap semiconductors
文献类型：期刊论文
| 作者 | Feng, Zhaochi1; Li, Can1; Jin, Shaoqing1,2; Zhang, Ying1; Fan, Fengtao1 |
| 刊名 | JOURNAL OF RAMAN SPECTROSCOPY
 |
| 出版日期 | 2016-08-01 |
| 卷号 | 47期号:8页码:884-887 |
| 关键词 | Deep Uv Resonance Raman Hexagonal Iii-nitride Wide Bandgap Semiconductors Electron-phonon Coupling |
| ISSN号 | 0377-0486 |
| DOI | 10.1002/jrs.4912 |
| 文献子类 | Article |
| 英文摘要 | Electron-phonon coupling (EPC) is an important issue in semiconductor physics because of its significant influence on the optical and electrical properties of semiconductors. In this work, the EPC in wide bandgap semiconductors including hexagonal BN and AlN was studied by deep UV resonance Raman spectroscopy. Up to fourth-order LO phonons are observed in the resonance Raman spectrum of hexagonal AlN. By contrast, only the prominent emission band near the band-edge and the Raman band attributed to E-2g mode are detected for hexagonal BN with deep UV resonance excitation. The different behavior in resonant Raman scattering between the III-nitrides reflects their large difference in EPC. The mechanism for EPC in hexagonal BN is the short-range deformation interaction, while that in hexagonal AlN is mainly associated with the weak long-range Frohlich interaction. Copyright (c) 2016 John Wiley & Sons, Ltd. |
| WOS关键词 | BORON-NITRIDE ; ALUMINUM NITRIDE ; LIGHT ; GAN ; ALN ; NANOCRYSTALS ; SCATTERING ; EXCITON ; CDSE ; WAVELENGTH |
| WOS研究方向 | Spectroscopy |
| 语种 | 英语 |
| WOS记录号 | WOS:000380949500002 |
| 出版者 | WILEY-BLACKWELL |
| 源URL | [http://cas-ir.dicp.ac.cn/handle/321008/170010]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 通讯作者 | Feng, Zhaochi; Li, Can |
| 作者单位 | 1.Chinese Acad Sci, State Key Lab Catalysis, Dalian Inst Chem Phys, Dalian 116023, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Feng, Zhaochi,Li, Can,Jin, Shaoqing,et al. Deep UV resonance Raman spectroscopic study on electron-phonon coupling in hexagonal III-nitride wide bandgap semiconductors[J]. JOURNAL OF RAMAN SPECTROSCOPY,2016,47(8):884-887. |
| APA | Feng, Zhaochi,Li, Can,Jin, Shaoqing,Zhang, Ying,&Fan, Fengtao.(2016).Deep UV resonance Raman spectroscopic study on electron-phonon coupling in hexagonal III-nitride wide bandgap semiconductors.JOURNAL OF RAMAN SPECTROSCOPY,47(8),884-887. |
| MLA | Feng, Zhaochi,et al."Deep UV resonance Raman spectroscopic study on electron-phonon coupling in hexagonal III-nitride wide bandgap semiconductors".JOURNAL OF RAMAN SPECTROSCOPY 47.8(2016):884-887. |
入库方式： OAI收割
来源：大连化学物理研究所
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