Kesterite Cu2Zn(Sn,Ge)(S,Se)(4) thin film with controlled Ge-doping for photovoltaic application
文献类型：期刊论文
| 作者 | Zhao, Wangen1,2,3; Pan, Daocheng3; Liu, Shengzhong (Frank)1,2,4 |
| 刊名 | NANOSCALE
 |
| 出版日期 | 2016 |
| 卷号 | 8期号:19页码:10160-10165 |
| ISSN号 | 2040-3364 |
| DOI | 10.1039/c6nr00959j |
| 文献子类 | Article |
| 英文摘要 | Cu2ZnSn(S,Se)(4) (CZTSSe) semiconductors have been a focus of extensive research effort owing to low-toxicity, high abundance and low material cost. Yet, the CZTSSe thin film solar cell has a low open-circuit voltage value that presents challenges. Herein, using GeSe2 as a new Ge source material, we have achieved a wider band gap CZTSSe-based semiconductor absorber layer with its band-gap controlled by adjusting the ratio of SnS2 : GeSe2 used. In addition, the Cu2Zn(Sn,Ge)(S,Se)(4) thin films were prepared with optimal Ge doping (30%) and solar cells were fabricated to attain a respectable power conversion efficiency of 4.8% under 1.5 AM with an active area of 0.19 cm(2) without an anti-reflection layer. |
| WOS关键词 | CU2ZNSN(S,SE)(4) SOLAR-CELLS ; NANOCRYSTALS ; FABRICATION ; EFFICIENCY ; PRECURSOR ; DEVICE ; ROUTE ; INKS |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000376047200029 |
| 出版者 | ROYAL SOC CHEMISTRY |
| 源URL | [http://cas-ir.dicp.ac.cn/handle/321008/170964]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 通讯作者 | Pan, Daocheng; Liu, Shengzhong (Frank) |
| 作者单位 | 1.Shaanxi Normal Univ, Key Lab Appl Surface & Colloid Chem, Natl Minist Educ, Sch Mat Sci & Engn, Xian 710062, Peoples R China 2.Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Engn Lab Adv Energy Technol, Xian 710062, Peoples R China 3.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Rare Earth Resource Utilizat, 5625 Renmin St, Changchun 130022, Jilin, Peoples R China 4.Chinese Acad Sci, Dalian Natl Lab Clean Energy, Dalian Inst Chem Phys, Dalian 116023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Wangen,Pan, Daocheng,Liu, Shengzhong . Kesterite Cu2Zn(Sn,Ge)(S,Se)(4) thin film with controlled Ge-doping for photovoltaic application[J]. NANOSCALE,2016,8(19):10160-10165. |
| APA | Zhao, Wangen,Pan, Daocheng,&Liu, Shengzhong .(2016).Kesterite Cu2Zn(Sn,Ge)(S,Se)(4) thin film with controlled Ge-doping for photovoltaic application.NANOSCALE,8(19),10160-10165. |
| MLA | Zhao, Wangen,et al."Kesterite Cu2Zn(Sn,Ge)(S,Se)(4) thin film with controlled Ge-doping for photovoltaic application".NANOSCALE 8.19(2016):10160-10165. |
入库方式： OAI收割
来源：大连化学物理研究所
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