Negative differential resistance and rectifying performance induced by doped graphene nanoribbons p-n device
文献类型：期刊论文
| 作者 | Li, Runwei1; Guo, Zhansheng3; Zhang, Jian1; Yin, Jingshuo1; Fang, Junfeng1; Huang, Aisheng1; Bai, Xiaojing1; Li, Qiuwu1; He, Jian2; Huang, Qing1 |
| 刊名 | PHYSICS LETTERS A
 |
| 出版日期 | 2016-03-06 |
| 卷号 | 380期号:9-10页码:1049-1055 |
| 关键词 | Graphene Nanoribbons First-principles Negative Differential Resistance Rectifying Performance Electronic Transport Properties |
| ISSN号 | 0375-9601 |
| DOI | 10.1016/j.physleta.2016.01.010 |
| 文献子类 | Article |
| 英文摘要 | Employing nonequilibrium Green's Functions in combination with density functional theory, the electronic transport properties of armchair graphene nanoribbon (GNR) devices with various widths are investigated in this work. In the adopted model, two semi-infinite graphene electrodes are periodically doped with boron or nitrogen atoms. Our calculations reveal that these devices have a striking nonlinear feature and show notable negative differential resistance (NDR). The results also indicate the diode like properties are reserved and the rectification ratios are high. It is found the electronic transport properties are strongly dependent on the width of doped nanoribbons and the positions of dopants and three distinct families are elucidated for the current armchair GNR devices. The NDR as well as rectifying properties can be well explained by the variation of transmission spectra and the relative shift of discrete energy states with applied bias voltage. These findings suggest that the doped armchair GNR is a promising candidate for the next generation nanoscale device. (C) 2016 Elsevier B.V. All rights reserved. |
| WOS关键词 | TRANSPORT-PROPERTIES ; RECTIFICATION ; ELECTRODES ; JUNCTIONS |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000370107200011 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://cas-ir.dicp.ac.cn/handle/321008/171260]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 通讯作者 | Du, Shiyu |
| 作者单位 | 1.Chinese Acad Sci, Ningbo Inst Ind Technol, Ningbo 315201, Zhejiang, Peoples R China 2.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China 3.Shanghai Inst Appl Math & Mech, Shanghai 200072, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Runwei,Guo, Zhansheng,Zhang, Jian,et al. Negative differential resistance and rectifying performance induced by doped graphene nanoribbons p-n device[J]. PHYSICS LETTERS A,2016,380(9-10):1049-1055. |
| APA | Li, Runwei.,Guo, Zhansheng.,Zhang, Jian.,Yin, Jingshuo.,Fang, Junfeng.,...&Du, Shiyu.(2016).Negative differential resistance and rectifying performance induced by doped graphene nanoribbons p-n device.PHYSICS LETTERS A,380(9-10),1049-1055. |
| MLA | Li, Runwei,et al."Negative differential resistance and rectifying performance induced by doped graphene nanoribbons p-n device".PHYSICS LETTERS A 380.9-10(2016):1049-1055. |
入库方式： OAI收割
来源：大连化学物理研究所
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