Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing
文献类型：期刊论文
| 作者 | Fan, Haibo1,4,5,6; Yang, Zhou4,5,6; Ren, Xianpei4,5,6; Yin, Mingli3,4,5,6; Gao, Fei4,5,6; Liu, Shengzhong (Frank)2,4,5,6 |
| 刊名 | AIP ADVANCES
 |
| 出版日期 | 2016 |
| 卷号 | 6期号:1 |
| ISSN号 | 2158-3226 |
| DOI | 10.1063/1.4941040 |
| 文献子类 | Article |
| 英文摘要 | The energy band alignment between pulsed-laser-deposited TiO2 and FTO was firstly characterized using high-resolution X-ray photoelectron spectroscopy. A valence band offset (VBO) of 0.61 eV and a conduction band offset (CBO) of 0.29 eV were obtained across the TiO2/FTO heterointerface. With annealing process, the VBO and CBO across the heterointerface were found to be -0.16 eV and 1.06 eV, respectively, with the alignment transforming from type-I to type-II. The difference in the band alignment is believed to be dominated by the core level down-shift of the FTO substrate, which is a result of the oxidation of Sn. Current-voltage test has verified that the band alignment has a significant effect on the current transport of the heterojunction. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
| WOS关键词 | SENSITIZED SOLAR-CELLS ; TIN OXIDE-FILMS ; ORGANOMETAL HALIDE PEROVSKITES ; LIGHT-EMITTING-DIODES ; ELECTRICAL-PROPERTIES ; OPTICAL-PROPERTIES ; LASER-DIODES ; HETEROJUNCTION ; PERFORMANCE ; DEPOSITION |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000369442200072 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://cas-ir.dicp.ac.cn/handle/321008/171370]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 通讯作者 | Fan, Haibo; Liu, Shengzhong (Frank) |
| 作者单位 | 1.NW Univ Xian, Sch Phys, Xian 710069, Peoples R China 2.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy, Dalian 116023, Peoples R China 3.Xian Technol Univ, Sch Sci, Xian 710062, Shaanxi, Peoples R China 4.Shaanxi Normal Univ, Natl Minist Educ, Key Lab Appl Surface & Colloid Chem, Xian 710119, Peoples R China 5.Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China 6.Shaanxi Normal Univ, Sch Mat Sci & Engn, Xian 710119, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fan, Haibo,Yang, Zhou,Ren, Xianpei,et al. Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing[J]. AIP ADVANCES,2016,6(1). |
| APA | Fan, Haibo,Yang, Zhou,Ren, Xianpei,Yin, Mingli,Gao, Fei,&Liu, Shengzhong .(2016).Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing.AIP ADVANCES,6(1). |
| MLA | Fan, Haibo,et al."Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing".AIP ADVANCES 6.1(2016). |
入库方式： OAI收割
来源：大连化学物理研究所
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