Characterization of tunnel oxide passivated contact with n-type poly-Si on p-type c-Si wafer substrate
文献类型：期刊论文
| 作者 | Guo, Xueqi1,2; Zeng, Yuheng2; Zhang, Zhi2; Huang, Yuqing2; Liao, Mingdun2; Yang, Qing2; Wang, Zhixue2; Du, Minyong3; Guan, Denggao1; Yan, Baojie2 |
| 刊名 | CURRENT APPLIED PHYSICS
 |
| 出版日期 | 2019-07-01 |
| 卷号 | 19期号:7页码:811-816 |
| 关键词 | Solar cell C-V measurement Built-in potential poly-Si TOPCon p-n junction |
| ISSN号 | 1567-1739 |
| DOI | 10.1016/j.cap.2019.04.014 |
| 通讯作者 | Guan, Denggao(gdg@cdut.edu.cn) ; Yan, Baojie(yanbaojie@nimte.ac.cn) ; Ye, Jichun(jichun.ye@nimte.ac.cn) |
| 英文摘要 | The junction properties of tunnel silicon oxide (SiOx) passivated contact (TOPCon) with n-type poly-Si on p-type c-Si wafer are characterized using current-voltage (J-V) and capacitance-voltage (C-V) measurements. The dark J-V curves show a standard diode characteristic with a turn-on voltage of similar to 0.63 V, indicating a p-n junction is formed. While the C-V curve displays an irregular shape with features of 1) a slow C increase with the decrease of the magnitude of reverse bias voltage, being used to estimate the built-in potential (V-bi), 2) a significant increase at a given positive bias voltage, corresponding to the geometric capacitance crossing the ultrathin SiOx, and 3) a sharp decrease to negative values, resulting from the charge tunneling through the SiOx layer. The C of depleting layer deviates from the normal linear curve in the 1/C-2-V plot, which is caused by the diffusion of P dopants from the n-type poly-Si into the p-type c-Si wafer as confirmed by the electrochemical capacitance-voltage measurements. However, the 1/C2+gamma-V plots with gamma > 0 leads to linear curves with a proper gamma and the V-bi can still be estimated. We find that the V-bi is the range of 0.75-0.85 V, increases with the increase of the doping ratio during the poly-Si fabrication process, and correlates with the passivation quality as measured by the reverse saturated current and implied open circuit voltage extracted from transient photoconductivity decay. |
| WOS关键词 | EFFICIENCY ; CAPACITANCE ; DENSITY |
| 资助项目 | Zhejiang Energy Group[znkj-2018-118] ; National Key R&D Program of China[2016YFB0700202] ; National Natural Science Foundation of China[61574145] ; National Natural Science Foundation of China[51502315] ; National Natural Science Foundation of China[61704176] ; National Natural Science Foundation of China[61874177] ; Key S & T Program of Ningbo[2016B10004] ; Zhejiang Provincial Natural Science Foundation[LY19F040002] ; Zhejiang Provincial Natural Science Foundation[LR19E020001] ; Natural Science Foundation of Ningbo City[2017A610020] ; International S& T Cooperation Program of Ningbo[2015D10021] ; Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications[ZJUAMIS1704] ; Major Project of Ningbo[2016B10004] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000467805500006 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | Zhejiang Energy Group ; Zhejiang Energy Group ; National Key R&D Program of China ; National Key R&D Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Key S & T Program of Ningbo ; Key S & T Program of Ningbo ; Zhejiang Provincial Natural Science Foundation ; Zhejiang Provincial Natural Science Foundation ; Natural Science Foundation of Ningbo City ; Natural Science Foundation of Ningbo City ; International S& T Cooperation Program of Ningbo ; International S& T Cooperation Program of Ningbo ; Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications ; Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications ; Major Project of Ningbo ; Major Project of Ningbo ; Zhejiang Energy Group ; Zhejiang Energy Group ; National Key R&D Program of China ; National Key R&D Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Key S & T Program of Ningbo ; Key S & T Program of Ningbo ; Zhejiang Provincial Natural Science Foundation ; Zhejiang Provincial Natural Science Foundation ; Natural Science Foundation of Ningbo City ; Natural Science Foundation of Ningbo City ; International S& T Cooperation Program of Ningbo ; International S& T Cooperation Program of Ningbo ; Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications ; Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications ; Major Project of Ningbo ; Major Project of Ningbo ; Zhejiang Energy Group ; Zhejiang Energy Group ; National Key R&D Program of China ; National Key R&D Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Key S & T Program of Ningbo ; Key S & T Program of Ningbo ; Zhejiang Provincial Natural Science Foundation ; Zhejiang Provincial Natural Science Foundation ; Natural Science Foundation of Ningbo City ; Natural Science Foundation of Ningbo City ; International S& T Cooperation Program of Ningbo ; International S& T Cooperation Program of Ningbo ; Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications ; Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications ; Major Project of Ningbo ; Major Project of Ningbo ; Zhejiang Energy Group ; Zhejiang Energy Group ; National Key R&D Program of China ; National Key R&D Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Key S & T Program of Ningbo ; Key S & T Program of Ningbo ; Zhejiang Provincial Natural Science Foundation ; Zhejiang Provincial Natural Science Foundation ; Natural Science Foundation of Ningbo City ; Natural Science Foundation of Ningbo City ; International S& T Cooperation Program of Ningbo ; International S& T Cooperation Program of Ningbo ; Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications ; Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications ; Major Project of Ningbo ; Major Project of Ningbo |
| 源URL | [http://cas-ir.dicp.ac.cn/handle/321008/171897]  |
| 专题 | 大连化学物理研究所_中国科学院大连化学物理研究所 |
| 通讯作者 | Guan, Denggao; Yan, Baojie; Ye, Jichun |
| 作者单位 | 1.Chengdu Univ Technol, Coll Mat & Chem & Chem Engn, 1 Dongsanlu, Chengdu 610059, Sichuan, Peoples R China 2.Chinese Acad Sci, Ningbo Mat Inst Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China 3.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian, Liaoning, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, Xueqi,Zeng, Yuheng,Zhang, Zhi,et al. Characterization of tunnel oxide passivated contact with n-type poly-Si on p-type c-Si wafer substrate[J]. CURRENT APPLIED PHYSICS,2019,19(7):811-816. |
| APA | Guo, Xueqi.,Zeng, Yuheng.,Zhang, Zhi.,Huang, Yuqing.,Liao, Mingdun.,...&Ye, Jichun.(2019).Characterization of tunnel oxide passivated contact with n-type poly-Si on p-type c-Si wafer substrate.CURRENT APPLIED PHYSICS,19(7),811-816. |
| MLA | Guo, Xueqi,et al."Characterization of tunnel oxide passivated contact with n-type poly-Si on p-type c-Si wafer substrate".CURRENT APPLIED PHYSICS 19.7(2019):811-816. |
入库方式： OAI收割
来源：大连化学物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。