Residual impurities and electrical properties of undoped LEC InAs single crystals
文献类型：期刊论文
| 作者 | Hu Weijie ; Zhao Youwen ; Sun Wenrong ; Duan Manlong ; Dong Zhiyuan ; Yang Jun |
| 刊名 | 半导体学报
 |
| 出版日期 | 2010 |
| 卷号 | 31期号:4页码:042001-1-042001-4 |
| 中文摘要 | impurities and their influence on the properties of inas single crystals have been studied by combining the results of glow discharge mass spectrometry (gdms), hall measurements, raman scattering and infrared absorption. the results indicate that carbon is a major impurity in lec-inas single crystals and exhibits a significant influence on the electrical and optical properties. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 语种 | 中文 |
| 公开日期 | 2011-08-16 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21624]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Hu Weijie,Zhao Youwen,Sun Wenrong,et al. Residual impurities and electrical properties of undoped LEC InAs single crystals[J]. 半导体学报,2010,31(4):042001-1-042001-4. |
| APA | Hu Weijie,Zhao Youwen,Sun Wenrong,Duan Manlong,Dong Zhiyuan,&Yang Jun.(2010).Residual impurities and electrical properties of undoped LEC InAs single crystals.半导体学报,31(4),042001-1-042001-4. |
| MLA | Hu Weijie,et al."Residual impurities and electrical properties of undoped LEC InAs single crystals".半导体学报 31.4(2010):042001-1-042001-4. |
入库方式： OAI收割
来源：半导体研究所
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