Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell
文献类型：期刊论文
| 作者 | Deng Qingwen ; Hou Qifeng; Xiao Hongling
|
| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2010 |
| 卷号 | 31期号:10页码:103003-1-103003-5 |
| 中文摘要 | A solar cell with a novel structure is investigated by means of the analysis of microelectronic and photonic structure (AMPS). The power conversion efficiency is investigated with the variations in interface recombination velocity, thicknesses of p-type layer, intrinsic layer, n-type layer, and doping density. Results show that it is available and preferable in theory to employ a-SiC: H as a window layer in p-a-SiC: H/i-a-Si: H/n-μc-Si solar cells, and provide a new approach to improving the power conversion efficiency of amorphous silicon solar cells |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | Knowledge Innovation Engineering of the Chinese Academy of Sciences,National Natural Science Foundation of China,State Key Development Program for Basic Research of China,Knowledge Innovation Program of the Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2011-08-16 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21668]  |
| 专题 | 半导体研究所_半导体材料科学中心 |
| 推荐引用方式 GB/T 7714 | Deng Qingwen,Hou Qifeng,Xiao Hongling. Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell[J]. Journal of Semiconductors,2010,31(10):103003-1-103003-5. |
| APA | Deng Qingwen,Hou Qifeng,&Xiao Hongling.(2010).Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell.Journal of Semiconductors,31(10),103003-1-103003-5. |
| MLA | Deng Qingwen,et al."Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell".Journal of Semiconductors 31.10(2010):103003-1-103003-5. |
入库方式： OAI收割
来源：半导体研究所
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