An efficient dose-compensation method for proximity effect correction
文献类型：期刊论文
| 作者 | Han Weihua ; Yang Xiang; Zhang Yang; Zhang Renping
|
| 刊名 | journal of semiconductors
 |
| 出版日期 | 2010 |
| 卷号 | 31期号:8页码:86001-1-86001-4 |
| 中文摘要 | a novel simple dose-compensation method is developed for proximity effect correction in electron-beam lithography. the sizes of exposed patterns depend on dose factors while other exposure parameters (including accelerate voltage, resist thickness, exposing step size, substrate material, and so on) remain constant. this method is based on two reasonable assumptions in the evaluation of the compensated dose factor: one is that the relation between dose factors and circle-diameters is linear in the range under consideration; the other is that the compensated dose factor is only affected by the nearest neighbors for simplicity. four-layer-hexagon photonic crystal structures were fabricated as test patterns to demonstrate this method. compared to the uncorrected structures, the homogeneity of the corrected hole-size in photonic crystal structures was clearly improved |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | national natural science foundation of china,national high technology research and development program of china |
| 语种 | 英语 |
| 公开日期 | 2011-08-16 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21680]  |
| 专题 | 半导体研究所_半导体集成技术工程研究中心 |
| 推荐引用方式 GB/T 7714 | Han Weihua,Yang Xiang,Zhang Yang,et al. An efficient dose-compensation method for proximity effect correction[J]. journal of semiconductors,2010,31(8):86001-1-86001-4. |
| APA | Han Weihua,Yang Xiang,Zhang Yang,&Zhang Renping.(2010).An efficient dose-compensation method for proximity effect correction.journal of semiconductors,31(8),86001-1-86001-4. |
| MLA | Han Weihua,et al."An efficient dose-compensation method for proximity effect correction".journal of semiconductors 31.8(2010):86001-1-86001-4. |
入库方式： OAI收割
来源：半导体研究所
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