High contrast ratio, high uniformity multiple quantum well spatial light modulators
文献类型：期刊论文
| 作者 | Huang Yuyang ; Liu H C ; Wasilewski Z R ; Buchanan M ; Laframboise S R ; Yang Chen ; Cui Guoxin ; Bian Lifeng ; Yang Hui ; Zhang Yaohui |
| 刊名 | journal of semiconductors
 |
| 出版日期 | 2010 |
| 卷号 | 31期号:3页码:62-65 |
| 中文摘要 | our latest research results on gaas-algaas multiple quantum well spatial light modulators are presented.the thickness uniformity of the epitaxial layers across the 3-inch wafer grown by our molecular beam epitaxy is better than 0.1% and the variation of cavity resonance wavelength within the wafer is only 0.9 nm. a contrast ratio (cr) of 102 by varying bias voltage from 0 to 6.7 v is achieved after fine tuning the cavity by etching an adjust layer. both theoretical and experimental results demonstrate that incorporating an adjust layer is an effective tuning method for obtaining high cr. |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | the suzhou international cooperation fund, china,the president fund of cas,the international collaboration plan for science and technology of the chinese ministry of science and technology |
| 语种 | 英语 |
| 公开日期 | 2011-08-16 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/21510]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Huang Yuyang,Liu H C,Wasilewski Z R,et al. High contrast ratio, high uniformity multiple quantum well spatial light modulators[J]. journal of semiconductors,2010,31(3):62-65. |
| APA | Huang Yuyang.,Liu H C.,Wasilewski Z R.,Buchanan M.,Laframboise S R.,...&Zhang Yaohui.(2010).High contrast ratio, high uniformity multiple quantum well spatial light modulators.journal of semiconductors,31(3),62-65. |
| MLA | Huang Yuyang,et al."High contrast ratio, high uniformity multiple quantum well spatial light modulators".journal of semiconductors 31.3(2010):62-65. |
入库方式： OAI收割
来源：半导体研究所
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