Ultrathin GaGeTe p-type transistors
文献类型：期刊论文
| 作者 | Wang, Weike1; Li, Liang2; Zhang, Zhitao3 ; Yang, Jiyong3; Tang, Dongsheng1; Zhai, Tianyou2
|
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2017-11-13 |
| 卷号 | 111期号:20页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.4998350 |
| 英文摘要 | We exfoliated bulk GaGeTe crystals down to ultrathin flakes using the scotch tape method and fabricated field effect transistors (FETs). The GaGeTe FETs display a p-type behavior with drain current modulation on the order of 10(3), hole mobility of 0.45 cm(2) V-1 s(-1), and photoresponsivity of 3.6 A W-1 at room temperature. These findings suggest that the layered GaGeTe is a promising 2D semiconductor for fabricating devices, such as transistors and photodetectors. Published by AIP Publishing. |
| WOS关键词 | RAMAN-SPECTRUM ; LAYER |
| 资助项目 | National Natural Science Foundation of China[11604340] ; National Natural Science Foundation of China[11304321] ; National Natural Science Foundation of China[11574081] ; China Postdoctoral Science Foundation[2015LH0018] ; China Postdoctoral Science Foundation[2017M610474] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000415648000049 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/36079]  |
| 专题 | 合肥物质科学研究院_中科院强磁场科学中心 |
| 通讯作者 | Tang, Dongsheng; Zhai, Tianyou |
| 作者单位 | 1.Hunan Normal Univ, Coll Phys & Informat Sci, Minist Educ,Synerget Innovat Ctr Quantum Effects, Key Lab Low Dimens Quantum Structures & Quantum C, Changsha 410081, Hunan, Peoples R China 2.Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China 3.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Anhui, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Weike,Li, Liang,Zhang, Zhitao,et al. Ultrathin GaGeTe p-type transistors[J]. APPLIED PHYSICS LETTERS,2017,111(20):3. |
| APA | Wang, Weike,Li, Liang,Zhang, Zhitao,Yang, Jiyong,Tang, Dongsheng,&Zhai, Tianyou.(2017).Ultrathin GaGeTe p-type transistors.APPLIED PHYSICS LETTERS,111(20),3. |
| MLA | Wang, Weike,et al."Ultrathin GaGeTe p-type transistors".APPLIED PHYSICS LETTERS 111.20(2017):3. |
入库方式： OAI收割
来源：合肥物质科学研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。