Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory
文献类型：期刊论文
| 作者 | Zhou, Guangdong1,2; Yang, Xiude2; Xiao, Lihua1; Sun, Bai3; Zhou, Ankun4,5 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2019-04-22 |
| 卷号 | 114期号:16页码:5 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.5089147 |
| 通讯作者 | Zhou, Guangdong(zhougd@swu.edu.cn) ; Sun, Bai(bsun@swjtu.edu.cn) |
| 英文摘要 | A redox reaction submerged by a high current magnitude is impressively observed in a Fe2O3 solid electrolyte-based resistive memory device at room temperature. Oxygen vacancy migration, Ag atom redox, phase-induced grain boundary, and water molecule interplay with the oxygen vacancy are responsible for the submerged redox behaviors. The observation of the submerged redox behavior in the Fe2O3 phase change process gives an insight into the evolution of memristors. Published under license by AIP Publishing. |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000466264600042 |
| 源URL | [http://ir.kib.ac.cn/handle/151853/66860]  |
| 专题 | 昆明植物研究所_植物化学与西部植物资源持续利用国家重点实验室 |
| 通讯作者 | Zhou, Guangdong; Sun, Bai |
| 作者单位 | 1.Guizhou Inst Technol, Sch Sci, Guiyang 550003, Guizhou, Peoples R China 2.Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China 3.Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China 4.Chinese Acad Sci, Kunming Inst Bot, Kunming 650201, Yunnan, Peoples R China 5.Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, Guangdong,Yang, Xiude,Xiao, Lihua,et al. Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory[J]. APPLIED PHYSICS LETTERS,2019,114(16):5. |
| APA | Zhou, Guangdong,Yang, Xiude,Xiao, Lihua,Sun, Bai,&Zhou, Ankun.(2019).Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory.APPLIED PHYSICS LETTERS,114(16),5. |
| MLA | Zhou, Guangdong,et al."Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory".APPLIED PHYSICS LETTERS 114.16(2019):5. |
入库方式： OAI收割
来源：昆明植物研究所
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