InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance
文献类型：期刊论文
| 作者 | Wu, Jian2; Ning, Yongqiang1 ; Zhang, Xing1; Zheng, Ming2; Lu, Wei2; Jia, Yan2; Li, Xue1; Yu, Qingnan2
|
| 刊名 | ACS PHOTONICS
 |
| 出版日期 | 2018-12-01 |
| 卷号 | 5期号:12页码:4896-4902 |
| 关键词 | tunable semiconductor lasers well-island composite quantum-confined structure In GaAs/GaAs material gain characteristics flat top indium-rich islands |
| ISSN号 | 2330-4022 |
| DOI | 10.1021/acsphotonics.8b01048 |
| 通讯作者 | Wu, Jian(jwu2@buaa.edu.cn) |
| 英文摘要 | In the development of semiconductor lasers, it has been a dream all along to simultaneously obtain extremely wide and uniform gain distribution, because such a gain configuration can greatly enhance semiconductor laser performance. Hence, it has also been a huge challenge to realize this dream so far. In this paper, we are reporting a special InGaAs-based well island composite quantum-confined structure, with which the best results to date in achieving both superwide and very uniform gain and power distributions are obtained. The spectral flatness of the output power can reach 0.1 dB, and the gain bandwidth is broadened to 6-fold broader than the fwhm (full width at half-maximum) of the standard gain spectrum from a classic InGaAs quantum well under the same carrier density. The formation of the well-island composite quantum-confined structure is associated with the indium-rich island effect in the material growth. The great significance of this work lies in that it is making the above dream come true, since it not only can tremendously increase the spectral tuning range of an InGaAs-based semiconductor laser but also exhibits a great potential on achieving uniform output power over the full spectral tuning range of the laser. |
| WOS关键词 | EXTERNAL-CAVITY ; LIGHT ; GROWTH ; DIODE ; SI |
| 资助项目 | National Natural Science Foundation of China[61376067] ; National Natural Science Foundation of China[61474118] |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Optics ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000454463000024 |
| 出版者 | AMER CHEMICAL SOC |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/60108]  |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 通讯作者 | Wu, Jian |
| 作者单位 | 1.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Jilin, Peoples R China 2.Beihang Univ, Dept Appl Phys, Beijing 100191, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu, Jian,Ning, Yongqiang,Zhang, Xing,et al. InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance[J]. ACS PHOTONICS,2018,5(12):4896-4902. |
| APA | Wu, Jian.,Ning, Yongqiang.,Zhang, Xing.,Zheng, Ming.,Lu, Wei.,...&Yu, Qingnan.(2018).InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance.ACS PHOTONICS,5(12),4896-4902. |
| MLA | Wu, Jian,et al."InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance".ACS PHOTONICS 5.12(2018):4896-4902. |
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