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Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram

文献类型：期刊论文

作者Wang, Hang1,2; Wang, Ying2,3; Gong, Shuyan2; Zhou, Xinyuan2; Yang, Zaixing4,5; Yang, Jun1,6; Han, Ning2,3; Chen, Yunfa2,3
刊名CRYSTALS
出版日期2019-03-15
卷号9期号:3页码:11
ISSN号2073-4352
关键词Ga2O3 nanowires Cu2O cubes Cu5As2 Cu-As-Ga ternary phase diagram chemical vapor deposition
DOI10.3390/cryst9030155
英文摘要Currently, it is challenging to develop new catalysts for semiconductor nanowires (NWs) growth in a complementary-metal-oxide-semiconductor (CMOS) compatible manner via a vapor-liquid-solid (VLS) mechanism. In this study, chemically synthesized Cu2O nano cubes are adopted as the catalyst for single crystalline beta-Ga2O3 NWs growth in chemical vapor deposition. The growth temperature is optimized to be 750 to 800 degrees C. The NW diameter is controlled by tuning the sizes of Cu2O cubes in the 20 to 100 nm range with a bandgap of similar to 4.85 eV as measured by ultraviolet-visible absorption spectroscopy. More importantly, the catalyst tip is found to be Cu5As2, which is distinguished from those Au-catalyzed Au-Ga alloys. After a comprehensive phase diagram investigation, the beta-Ga2O3 NWs are proposed to be grown by the ternary phase of Cu-As-Ga diffusing Ga into the growth frontier of the NW, where Ga react with residual oxygen to form the NWs. Afterward, Ga diminishes after growth since Ga would be the smallest component in the ternary alloy. All these results show the importance of the catalyst choice for CMOS compatible NW growth and also the potency of the ternary phase catalyst growth mode in other semiconductor NWs synthesis.
WOS关键词BETA-GA2O3 NANOWIRES ; NANOSTRUCTURES ; NANORIBBONS ; DEPENDENCE ; MECHANISM ; SILICON
资助项目National Natural Science Foundation of China[51602314] ; National Natural Science Foundation of China[61504151] ; National Key R&D Program of China[2017YFA0305500] ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences[122111KYSB20150064]
WOS研究方向Crystallography ; Materials Science
语种英语
出版者MDPI
WOS记录号WOS:000464477600002
资助机构National Natural Science Foundation of China ; National Key R&D Program of China ; CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences
源URL[http://ir.ipe.ac.cn/handle/122111/28283]  
专题中国科学院过程工程研究所
通讯作者Yang, Jun; Han, Ning; Chen, Yunfa
作者单位1.Xian Univ Architecture & Technol, Sch Met Engn, Xian 710055, Shaanxi, Peoples R China
2.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
3.Chinese Acad Sci, Inst Urban Environm, Ctr Excellence Reg Atmospher Environm, Xiamen 361021, Peoples R China
4.Shandong Univ, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China
5.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
6.Met Engn & Technol Res Ctr Shaanxi Prov, Xian 710055, Shaanxi, Peoples R China
推荐引用方式
GB/T 7714		 Wang, Hang,Wang, Ying,Gong, Shuyan,et al. Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram[J]. CRYSTALS,2019,9(3):11.
APA Wang, Hang.,Wang, Ying.,Gong, Shuyan.,Zhou, Xinyuan.,Yang, Zaixing.,...&Chen, Yunfa.(2019).Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram.CRYSTALS,9(3),11.
MLA Wang, Hang,et al."Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram".CRYSTALS 9.3(2019):11.

入库方式： OAI收割

来源：过程工程研究所

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