中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations

文献类型:期刊论文

作者Mao, Yuliang1; Mao, Xin1; Zhao, Hongquan2; Zhang, Nandi1; Shi, Xuan2; Yuan, Jianmei3
刊名SCIENTIFIC REPORTS
出版日期2018-12-05
卷号8页码:9
ISSN号2045-2322
DOI10.1038/s41598-018-36068-x
通讯作者Mao, Yuliang(ylmao@xtu.edu.cn) ; Zhao, Hongquan(hqzhao@cigit.ac.cn)
英文摘要The effect of thermal treatment and annealing under different temperatures from 100 degrees C to 250 degrees C on the photoluminescence spectroscopy of the GeSe ultrathin slab is reported. After the thermal treatment and annealing under 200 degrees C, we found that the photoluminescence intensity of A exciton and B exciton in GeSe ultrathin slab is increased to twice as much as that in untreated case, while is increased by similar to 84% in the photoluminescence intensity of C exciton. Combined by our experimental work and theoretical simulations, our study confirms the significant role of thermal treatments and annealing in reducing surface roughness and removing the Se vacancy to form more compact and smoother regions in GeSe ultrathin slab. Our findings imply that the improved quality of GeSe surface after thermal treatments is an important factor for the photoluminescence enhancement.
资助项目National Natural Science Foundation of China[11471280] ; National Natural Science Foundation of China[11374251] ; National Natural Science Foundation of China[61775214] ; National Natural Science Foundation of China[61601433] ; Research Foundation of Education Bureau of Hunan Province, China[16A207] ; Research Foundation of Education Bureau of Hunan Province, China[17A207] ; Program for Changjiang Scholars and Innovative Research Team in University[IRT13093] ; CAS Light of West China programs
WOS研究方向Science & Technology - Other Topics
语种英语
出版者NATURE PUBLISHING GROUP
WOS记录号WOS:000452205300022
源URL[http://119.78.100.138/handle/2HOD01W0/7203]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Mao, Yuliang; Zhao, Hongquan
作者单位1.Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R China
2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 401120, Peoples R China
3.Xiangtan Univ, Sch Math & Computat Sci, Hunan Key Lab Computat & Simulat Sci & Engn, Xiangtan 411105, Hunan, Peoples R China
推荐引用方式
GB/T 7714
Mao, Yuliang,Mao, Xin,Zhao, Hongquan,et al. Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations[J]. SCIENTIFIC REPORTS,2018,8:9.
APA Mao, Yuliang,Mao, Xin,Zhao, Hongquan,Zhang, Nandi,Shi, Xuan,&Yuan, Jianmei.(2018).Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations.SCIENTIFIC REPORTS,8,9.
MLA Mao, Yuliang,et al."Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations".SCIENTIFIC REPORTS 8(2018):9.

入库方式: OAI收割

来源:重庆绿色智能技术研究院

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