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Hybrid graphene heterojunction photodetector with high infrared responsivity through barrier tailoring

文献类型：期刊论文

作者Zhou, Quan1,2; Shen, Jun1; Liu, Xiangzhi1,3; Li, Zhancheng1; Jiang, Hao1; Feng, Shuanglong1; Feng, Wenlin3; Wang, Yuefeng1,2; Wei, Dapeng1
刊名NANOTECHNOLOGY
出版日期2019-05-10
卷号30期号:19页码:7
关键词graphene silicon Schottky junction barrier height infrared photodetector
ISSN号0957-4484
DOI10.1088/1361-6528/aaf266
通讯作者Feng, Wenlin(wenlinfeng@126.com) ; Wei, Dapeng(dpwei@cigit.ac.cn)
英文摘要The graphene/Si heterojunction is attractive for high gain and broadband photodetection through photogating effect. However, the photoresponsivity in these devices are still limited to under 1 A W-1 if no narrowband absorption-enhanced nanostructures were used. In this paper, the effects of barriers on photoresponse are systematically studied at 1550 nm wavelength. Different barrier heights are obtained through selection of substrates, graphene doping and electrical tuning. Lower barrier height for graphene side and higher barrier height for silicon side are found to be beneficial for better infrared photoresponse. Through Polyetherimide doping of graphene and back-gated electrical modulation, the responsivity finally reached 5.71 A W-1, which to our knowledge is among the best results for graphene-based infrared photodetectors with graphene adopted as a light-absorption material. It is found that the thermionic emission efficiency of indirect transition in graphene is related to the difference in emissioin barrier height, and the lifetime of photoinduced carriers in the channel can be enhanced by built-in potential. These results lay the foundation for the photodetection applicatioins of graphene/Si heterojunction in the longer-wavelength infrared region.
资助项目NSFC[11404329] ; NSFC[61504148] ; NSFC[51402291] ; NSFC[61705229] ; Youth Innovation Promotion Association of CAS[2015316] ; Project of Chongqing brain science Collaborative Innovation Center ; Chongqing Research Program of Basic Research and Frontier Technology[cstc2015jcyjA50018] ; Project of CAS Western Young Scholar ; Project of CQ CSTC[cstc2017zdcy-zdyfX0001] ; Fundamental and Advanced Research Project (Key Program) of Chong Qing Municipality[cstc2015jcyjBX0046]
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000460059700002
出版者IOP PUBLISHING LTD
源URL[http://119.78.100.138/handle/2HOD01W0/7401]  
专题微纳制造与系统集成研究中心
通讯作者Feng, Wenlin; Wei, Dapeng
作者单位1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China
2.Ordnance Engn Coll, Dept Elect & Opt Engn, Shijiazhuang 050003, Hebei, Peoples R China
3.Chongqing Univ Technol, Dept Appl Phys, Chongqing 400054, Peoples R China
推荐引用方式
GB/T 7714		 Zhou, Quan,Shen, Jun,Liu, Xiangzhi,et al. Hybrid graphene heterojunction photodetector with high infrared responsivity through barrier tailoring[J]. NANOTECHNOLOGY,2019,30(19):7.
APA Zhou, Quan.,Shen, Jun.,Liu, Xiangzhi.,Li, Zhancheng.,Jiang, Hao.,...&Wei, Dapeng.(2019).Hybrid graphene heterojunction photodetector with high infrared responsivity through barrier tailoring.NANOTECHNOLOGY,30(19),7.
MLA Zhou, Quan,et al."Hybrid graphene heterojunction photodetector with high infrared responsivity through barrier tailoring".NANOTECHNOLOGY 30.19(2019):7.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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