Resistive switching device based on high-mobility graphene and its switching mechanism
文献类型：期刊论文
| 作者 | Zhang,Enliang; Zhou,Quan; Shen,Jun |
| 刊名 | Journal of Physics: Conference Series
 |
| 出版日期 | 2019-02-01 |
| 卷号 | 1168期号:2 |
| ISSN号 | 1742-6588 |
| DOI | 10.1088/1742-6596/1168/2/022074 |
| 英文摘要 | Abstract Graphene is a promising material for fast memory device, due to its high mobility and potential for ultrasmall linewidth. However, the high mobility are normally obtained with strict limitations, such as Boron nitride substrate and capping layer, or low temperature with mechanical exfoliation. In this paper, we modified the fabrication process of graphene device, and high carrier mobility larger than 10,000 cm2/(Vs) was obtained for graphene grown by chemical vapor deposition. Resistive switching devices based on these high mobility graphene were fabricated, and the conducting mechanism of the switching process were discussed in detail. A model based on a Schottky diode in series connection with a tunneling junction is found to be consistent with the conducting mechanism. Our results are useful for normal research groups with only traditional nanofabrication facility. |
| 语种 | 英语 |
| WOS记录号 | IOP:1742-6588-1168-2-022074 |
| 出版者 | IOP Publishing |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/7588]  |
| 专题 | 微纳制造与系统集成研究中心 |
| 作者单位 | Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, P. R. China |
| 推荐引用方式 GB/T 7714 | Zhang,Enliang,Zhou,Quan,Shen,Jun. Resistive switching device based on high-mobility graphene and its switching mechanism[J]. Journal of Physics: Conference Series,2019,1168(2). |
| APA | Zhang,Enliang,Zhou,Quan,&Shen,Jun.(2019).Resistive switching device based on high-mobility graphene and its switching mechanism.Journal of Physics: Conference Series,1168(2). |
| MLA | Zhang,Enliang,et al."Resistive switching device based on high-mobility graphene and its switching mechanism".Journal of Physics: Conference Series 1168.2(2019). |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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