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Infrared Photodetector Based on the Photothermionic Effect of Graphene-Nanowall/Silicon Heterojunction

文献类型：期刊论文

作者Liu, Xiangzhi1,2; Zhou, Quan1,3; Luo, Shi1; Du, Haiwei1; Cao, Zhensong4; Peng, Xiaoyu1; Feng, Wenlin2; Shen, Jun1; Wei, Dapeng1
刊名ACS APPLIED MATERIALS & INTERFACES
出版日期2019-05-15
卷号11期号:19页码:17663-17669
关键词graphene nanoparticle photodetector hot electron Schottky barrier thermionic emission
ISSN号1944-8244
DOI10.1021/acsami.9b03329
通讯作者Shen, Jun(shenjun@cigit.ac.cn) ; Wei, Dapeng(dpwei@cigit.ac.cn)
英文摘要Because of the slow relaxation process according to weak acoustic phonon interaction, the photothermionic effect in graphene could be much more obvious than in the metal film, so a graphene heterojunction photodetector based on the photothermionic effect is promising for infrared imaging applications. However, the 2.3% absorption rate of the graphene film presents a severe limitation. Here, in situ grown graphene nanowalls (GNWs) were integrated on the silicon substrate interfaced with Au nanoparticles. Because of the strong infrared absorption and hot-carrier relaxation process in GNWs, the as prepared GNWs/Au/silicon heterojunction has a photo to dark ratio of 2 X 10(4), responsivity of 138 mA/W, and linear dynamic range of 89.7 dB, with a specific detectivity of 1.4 X 10(10) and 1.6 x 10(9) cm Hz(1/2)/W based on calculated and measured noise, respectively, in 1550 nm at room temperature, and has the best performance among silicon-compatible infrared photodetectors without any complicated waveguide structures. Obvious photoresponses are also detected in the mid-infrared and terahertz band. The interface Au particle is found to reduce the barrier height and enhance absorption. The device structure in this report could be compatible with the semiconductor process, so that infrared photodetectors with high integration density and low cost could be potentially realized.
资助项目NSFC[61705229] ; Youth Innovation Promotion Association of CAS[2015316] ; Youth Innovation Promotion Association of CAS[2018416] ; Project of Chongqing brain science Collaborative Innovation Center ; Project of CAS Western Young Scholar ; Project of CQ CSTC[cstc2017zdcy-zdyfX0001] ; Project of CQ CSTC[cstc2017zdcy-zdyfX0078]
WOS研究方向Science & Technology - Other Topics ; Materials Science
语种英语
WOS记录号WOS:000468364500059
出版者AMER CHEMICAL SOC
源URL[http://119.78.100.138/handle/2HOD01W0/7895]  
专题微纳制造与系统集成研究中心
通讯作者Shen, Jun; Wei, Dapeng
作者单位1.Chinese Acad Sci, Chongqing Key Lab Multiscale Mfg Technol, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
2.Chongqing Univ Technol, Dept Appl Phys, Chongqing 400054, Peoples R China
3.China Aerodynam Res & Dev Ctr, Mianyang 621000, Peoples R China
4.Chinese Acad Sci, Key Lab Atmospher Opt, Hefei 230031, Anhui, Peoples R China
推荐引用方式
GB/T 7714		 Liu, Xiangzhi,Zhou, Quan,Luo, Shi,et al. Infrared Photodetector Based on the Photothermionic Effect of Graphene-Nanowall/Silicon Heterojunction[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(19):17663-17669.
APA Liu, Xiangzhi.,Zhou, Quan.,Luo, Shi.,Du, Haiwei.,Cao, Zhensong.,...&Wei, Dapeng.(2019).Infrared Photodetector Based on the Photothermionic Effect of Graphene-Nanowall/Silicon Heterojunction.ACS APPLIED MATERIALS & INTERFACES,11(19),17663-17669.
MLA Liu, Xiangzhi,et al."Infrared Photodetector Based on the Photothermionic Effect of Graphene-Nanowall/Silicon Heterojunction".ACS APPLIED MATERIALS & INTERFACES 11.19(2019):17663-17669.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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