Ga-Doping-Induced Carrier Tuning and Multiphase Engineering in n-type PbTe with Enhanced Thermoelectric Performance
文献类型：期刊论文
| 作者 | Wang, Zhengshang1; Wang, Guoyu2,3 ; Wang, Ruifeng2,3; Zhou, Xiaoyuan4; Chen, Zhiyu1; Yin, Cong1; Tang, Mingjing1; Hu, Qing1; Tang, Jun1; Ang, Ran1,5
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| 刊名 | ACS Applied Materials and Interfaces
 |
| 出版日期 | 2018 |
| 卷号 | 10期号:26页码:22401-22407 |
| ISSN号 | 19448244 |
| DOI | 10.1021/acsami.8b05117 |
| 英文摘要 | P-type lead telluride (PbTe) emerged as a promising thermoelectric material for intermediate-temperature waste-heat-energy harvesting. However, n-type PbTe still confronted with a considerable challenge owing to its relatively low figure of merit ZT and conversion efficiency η, limiting widespread thermoelectric applications. Here, we report that Ga-doping in n-type PbTe can optimize carrier concentration and thus improve the power factor. Moreover, further experimental and theoretical evidence reveals that Ga-doping-induced multiphase structures with nano- to micrometer size can simultaneously modulate phonon transport, leading to dramatic reduction of lattice thermal conductivity. As a consequence, a tremendous enhancement of ZT value at 823 K reaches ∼1.3 for n-type Pb0.97Ga0.03Te. In particular, in a wide temperature range from 323 to 823 K, the average ZTavevalue of ∼0.9 and the calculated conversion efficiency η of ∼13% are achieved by Ga doping. The present findings demonstrate the great potential in Ga-doped PbTe thermoelectric materials through a synergetic carrier tuning and multiphase engineering strategy. © Copyright 2018 American Chemical Society. |
| 电子版国际标准刊号 | 19448252 |
| 语种 | 英语 |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/7991]  |
| 专题 | 机器人与3D打印技术创新中心 |
| 作者单位 | 1.Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu; 610064, China; 2.Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing; 400714, China; 3.University of Chinese Academy of Sciences, Beijing; 100190, China; 4.College of Physics, Chongqing University, Chongqing; 401331, China; 5.Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu; 610065, China |
| 推荐引用方式 GB/T 7714 | Wang, Zhengshang,Wang, Guoyu,Wang, Ruifeng,et al. Ga-Doping-Induced Carrier Tuning and Multiphase Engineering in n-type PbTe with Enhanced Thermoelectric Performance[J]. ACS Applied Materials and Interfaces,2018,10(26):22401-22407. |
| APA | Wang, Zhengshang.,Wang, Guoyu.,Wang, Ruifeng.,Zhou, Xiaoyuan.,Chen, Zhiyu.,...&Ang, Ran.(2018).Ga-Doping-Induced Carrier Tuning and Multiphase Engineering in n-type PbTe with Enhanced Thermoelectric Performance.ACS Applied Materials and Interfaces,10(26),22401-22407. |
| MLA | Wang, Zhengshang,et al."Ga-Doping-Induced Carrier Tuning and Multiphase Engineering in n-type PbTe with Enhanced Thermoelectric Performance".ACS Applied Materials and Interfaces 10.26(2018):22401-22407. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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