Ultra-high average figure of merit in synergistic band engineered SnxNa1− xSe0.9S0.1 single crystals
文献类型：期刊论文
| 作者 | Peng, Kunling1,2; Zhang, Bin3; Wu, Hong1,2; Cao, Xianlong4; Li, Ang3; Yang, Dingfeng3; Lu, Xu1; Wang, Guoyu2 ; Han, Xiaodong3; Uher, Ctirad5
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| 刊名 | Materials Today
 |
| 出版日期 | 2018 |
| 卷号 | 21期号:5页码:501-507 |
| ISSN号 | 13697021 |
| DOI | 10.1016/j.mattod.2017.11.005 |
| 英文摘要 | Thermal-electricity conversion is one of the most promising routes to harvest heat and convert it as easily storable and deliverable electric energy. Signicant progress has been made since the discovery of Seebeck effect in 1821, particularly, the figure of merit zT approached a record high value of 2.6 in 2014. However, for thermoelectric devices, high average zT values (zTave) over the operating temperature range is more important as it is directly related to the conversion efficiency (η). Approaching highly stable and repeatable ultra-high zTave for Te-free materials has been historically challenging over the past century though exciting progress with zTave well above 1.10 was made recently. Here, through synergistic band engineering strategy for single crystalline SnSe, we report a series of record high zTave over a wide temperature range, approaching ∼1.60 in the range from 300 K to 923 K in Na-doped SnSe0.9S0.1 solid solution single crystals, with the maximum zT of 2.3 at 773 K. These ultra-high thermoelectric performance derive from the new multiple valence band extrema near the band edges in SnSe0.9S0.1 and the shift of Fermi level towards the multi-valley bands through Na doping which introduce additional carrier pockets to attend electrical transport. These effects result in an optimized ultrahigh power factor exceeding 4.0 mW m−1 K−2 in Sn0.97Na0.03Se0.9S0.1 single crystals. Combined with the extremely lowered thermal conductivity attributed from the intrinsic anharmonicity and point defect phonon scattering, the series of ultra-high zTave and a record high calculated conversion efficiency of 21% over a wide temperature range are approached. © 2017 Elsevier Ltd |
| 电子版国际标准刊号 | 18734103 |
| 语种 | 英语 |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/8017]  |
| 专题 | 机器人与3D打印技术创新中心 |
| 作者单位 | 1.College of Physics, Chongqing University, Chongqing; 401331, China; 2.Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing; 400714, China; 3.Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing; 100024, China; 4.School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing; 401331, China; 5.Department of Physics, University of Michigan, Ann Arbor; MI; 48109, United States |
| 推荐引用方式 GB/T 7714 | Peng, Kunling,Zhang, Bin,Wu, Hong,et al. Ultra-high average figure of merit in synergistic band engineered SnxNa1− xSe0.9S0.1 single crystals[J]. Materials Today,2018,21(5):501-507. |
| APA | Peng, Kunling.,Zhang, Bin.,Wu, Hong.,Cao, Xianlong.,Li, Ang.,...&Zhou, Xiaoyuan.(2018).Ultra-high average figure of merit in synergistic band engineered SnxNa1− xSe0.9S0.1 single crystals.Materials Today,21(5),501-507. |
| MLA | Peng, Kunling,et al."Ultra-high average figure of merit in synergistic band engineered SnxNa1− xSe0.9S0.1 single crystals".Materials Today 21.5(2018):501-507. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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