A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications
文献类型：期刊论文
| 作者 | Congxin Xia; Juan Du; Wenqi Xiong; Yu Jia; Zhongming Wei; Jingbo Li |
| 刊名 | Journal of Materials Chemistry A
 |
| 出版日期 | 2017 |
| 卷号 | 5页码:13400–13410 |
| 学科主题 | 半导体物理 |
| 公开日期 | 2018-06-01 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28521]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Congxin Xia,Juan Du,Wenqi Xiong,et al. A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications[J]. Journal of Materials Chemistry A,2017,5:13400–13410. |
| APA | Congxin Xia,Juan Du,Wenqi Xiong,Yu Jia,Zhongming Wei,&Jingbo Li.(2017).A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications.Journal of Materials Chemistry A,5,13400–13410. |
| MLA | Congxin Xia,et al."A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications".Journal of Materials Chemistry A 5(2017):13400–13410. |
入库方式： OAI收割
来源：半导体研究所
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