A self-consistent numerical approach for characterizing the band structures and gain spectrum of tensile-strained and n+-doped Ge/GeSi quantum wells
文献类型：期刊论文
| 作者 | Yu Jiang; Yun Xu; Haoyue Wu; Jian Li; Lin Bai; Huamin Chen; Jiushuang Zhang; Guofeng Song |
| 刊名 | Journal of Physics D: Applied Physics
 |
| 出版日期 | 2017 |
| 卷号 | 50期号:2017页码:475104 (9pp) |
| 学科主题 | 光电子学 |
| 公开日期 | 2018-11-30 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28815]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Yu Jiang,Yun Xu,Haoyue Wu,et al. A self-consistent numerical approach for characterizing the band structures and gain spectrum of tensile-strained and n+-doped Ge/GeSi quantum wells[J]. Journal of Physics D: Applied Physics,2017,50(2017):475104 (9pp). |
| APA | Yu Jiang.,Yun Xu.,Haoyue Wu.,Jian Li.,Lin Bai.,...&Guofeng Song.(2017).A self-consistent numerical approach for characterizing the band structures and gain spectrum of tensile-strained and n+-doped Ge/GeSi quantum wells.Journal of Physics D: Applied Physics,50(2017),475104 (9pp). |
| MLA | Yu Jiang,et al."A self-consistent numerical approach for characterizing the band structures and gain spectrum of tensile-strained and n+-doped Ge/GeSi quantum wells".Journal of Physics D: Applied Physics 50.2017(2017):475104 (9pp). |
入库方式： OAI收割
来源：半导体研究所
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