The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer
文献类型：期刊论文
| 作者 | Shuang Cui; Yuantao Zhang; Zhen Huang; Gaoqiang Deng; Baozhu Li; Degang Zhao; Yuchun Chang |
| 刊名 | J Mater Sci: Mater Electron
 |
| 出版日期 | 2017 |
| 卷号 | 28页码:6008–6014 |
| 学科主题 | 光电子学 |
| 公开日期 | 2018-11-30 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28790]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Shuang Cui,Yuantao Zhang,Zhen Huang,et al. The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer[J]. J Mater Sci: Mater Electron,2017,28:6008–6014. |
| APA | Shuang Cui.,Yuantao Zhang.,Zhen Huang.,Gaoqiang Deng.,Baozhu Li.,...&Yuchun Chang.(2017).The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer.J Mater Sci: Mater Electron,28,6008–6014. |
| MLA | Shuang Cui,et al."The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer".J Mater Sci: Mater Electron 28(2017):6008–6014. |
入库方式： OAI收割
来源：半导体研究所
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