Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes
文献类型：期刊论文
| 作者 | J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; W. Liu; X. Li; F. Liang; S. T. Liu |
| 刊名 | Scientific Reports
 |
| 出版日期 | 2017 |
| 卷号 | 7页码:44850 |
| 学科主题 | 光电子学 |
| 公开日期 | 2018-11-30 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28788]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | J. Yang,D. G. Zhao,D. S. Jiang,et al. Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes[J]. Scientific Reports,2017,7:44850. |
| APA | J. Yang.,D. G. Zhao.,D. S. Jiang.,P. Chen.,J. J. Zhu.,...&H. Yang.(2017).Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes.Scientific Reports,7,44850. |
| MLA | J. Yang,et al."Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes".Scientific Reports 7(2017):44850. |
入库方式： OAI收割
来源：半导体研究所
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