Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3
文献类型：期刊论文
| 作者 | J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; W. Liu; F. Liang; X. Li; S.T. Liu |
| 刊名 | Superlattices and Microstructures
 |
| 出版日期 | 2017 |
| 卷号 | 102期号:2017页码:35-39 |
| 学科主题 | 光电子学 |
| 公开日期 | 2018-11-30 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28787]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | J. Yang,D.G. Zhao,D.S. Jiang,et al. Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3[J]. Superlattices and Microstructures,2017,102(2017):35-39. |
| APA | J. Yang.,D.G. Zhao.,D.S. Jiang.,P. Chen.,J.J. Zhu.,...&H. Yang.(2017).Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3.Superlattices and Microstructures,102(2017),35-39. |
| MLA | J. Yang,et al."Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3".Superlattices and Microstructures 102.2017(2017):35-39. |
入库方式： OAI收割
来源：半导体研究所
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