中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region

文献类型:期刊论文

作者J. YANG; D. G. ZHAO; D. S. JIANG; X. LI; F. LIANG; P. CHEN; J. J. ZHU; Z. S. LIU; S. T. LIU; L. Q. ZHANG
刊名OPTICS EXPRESS
出版日期2017
卷号25期号:9页码:9595-9602
学科主题光电子学
公开日期2018-11-30
源URL[http://ir.semi.ac.cn/handle/172111/28786]  
专题半导体研究所_光电子研究发展中心
推荐引用方式
GB/T 7714
J. YANG,D. G. ZHAO,D. S. JIANG,et al. Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region[J]. OPTICS EXPRESS,2017,25(9):9595-9602.
APA J. YANG.,D. G. ZHAO.,D. S. JIANG.,X. LI.,F. LIANG.,...&M. LI.(2017).Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region.OPTICS EXPRESS,25(9),9595-9602.
MLA J. YANG,et al."Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region".OPTICS EXPRESS 25.9(2017):9595-9602.

入库方式: OAI收割

来源:半导体研究所

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