Naphthalenediimide-Based Copolymers Incorporating Vinyl-Linkages for High-Performance Ambipolar Field-Effect Transistors and Complementary-Like Inverters under Air
文献类型：期刊论文
| 作者 | Chen, Huajie; Guo, Yunlong; Mao, Zupan; Yu, Gui; Huang, Jianyao; Zhao, Yan; Liu, Yunqi |
| 刊名 | CHEMISTRY OF MATERIALS
 |
| 出版日期 | 2013-09-24 |
| 卷号 | 25期号:18页码:3589-3596 |
| 关键词 | Naphthalenediimide Ambipolar Transistors Complementary-like Inverters Vinyl Linkages High Performance |
| ISSN号 | 0897-4756 |
| DOI | 10.1021/cm401130n |
| 英文摘要 | We report the synthesis of two novel donoracceptor copolymers poly{[N, N'-bis(alkyl)-1,4,5,8-naphthalene diimide-2,6-diyl-alt-5,5'-di(thiophen-2-yl)-2,2'-(E)-2-(2-(thiophen-2-yl)vinyl)thiophene]} (PNVTs) based on naphthalenediimide (NDI) acceptor and (E)-2-(2-(thiophen-2-yl)vinyl)thiophene donor. The incorporations of vinyl linkages into polymer backbones maintain the energy levels of the lowest unoccupied molecular orbits at -3.90 eV, therefore facilitating the electron injection. Moreover, the energy levels of the highest occupied molecular orbits increase from -5.82 to -5.61 eV, successfully decreasing the hole injection barrier. Atomic force microscopy measurements indicate that PNVTs thin films exhibit larger polycrystalline grains compared with that of poly{[N, N'-bis(2-octyldodecyl)-1,4,5,8-naphthalene diimide-2,6-diyl]-alt- 5,5'-(2,2'-bithiophene)} [P(NDI2OD-T2)], consistent with the stronger pi-pi stacking measured by grazing incidence X-ray scatting. To optimize devices performance, field-effect transistors (FETs) with three devices configurations have been investigated. The results indicate that the electron mobility of the vinyl-containing PNVTs exhibit about 35 times higher than that of P(NDI2OD-T2). Additionally, the vinyl-linkages in PNVTs remarkably enhance ambipolar transport of their top-gate FETs, obtaining high hole and electron mobilities of 0.30 and 1.57 cm(2) V1 s1, respectively, which are among the highest values reported to date for the NDI-based polymers. Most importantly, ambipolar inverters have been realized in ambient, exhibiting a high gain of 155. These results provide important progresses in solution-processed ambipolar polymeric FETs and complementary-like inverters. |
| 语种 | 英语 |
| WOS记录号 | WOS:000330096600004 |
| 出版者 | AMER CHEMICAL SOC |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/41989]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Yu, Gui |
| 作者单位 | Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, Huajie,Guo, Yunlong,Mao, Zupan,et al. Naphthalenediimide-Based Copolymers Incorporating Vinyl-Linkages for High-Performance Ambipolar Field-Effect Transistors and Complementary-Like Inverters under Air[J]. CHEMISTRY OF MATERIALS,2013,25(18):3589-3596. |
| APA | Chen, Huajie.,Guo, Yunlong.,Mao, Zupan.,Yu, Gui.,Huang, Jianyao.,...&Liu, Yunqi.(2013).Naphthalenediimide-Based Copolymers Incorporating Vinyl-Linkages for High-Performance Ambipolar Field-Effect Transistors and Complementary-Like Inverters under Air.CHEMISTRY OF MATERIALS,25(18),3589-3596. |
| MLA | Chen, Huajie,et al."Naphthalenediimide-Based Copolymers Incorporating Vinyl-Linkages for High-Performance Ambipolar Field-Effect Transistors and Complementary-Like Inverters under Air".CHEMISTRY OF MATERIALS 25.18(2013):3589-3596. |
入库方式： OAI收割
来源：化学研究所
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