Fractal Etching of Graphene
文献类型：期刊论文
| 作者 | Geng, Dechao; Wu, Bin; Guo, Yunlong; Luo, Birong; Xue, Yunzhou; Chen, Jianyi; Yu, Gui; Liu, Yunqi |
| 刊名 | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
 |
| 出版日期 | 2013-05-01 |
| 卷号 | 135期号:17页码:6431-6434 |
| ISSN号 | 0002-7863 |
| DOI | 10.1021/ja402224h |
| 英文摘要 | An anisotropic etching mode is commonly known for perfect crystalline materials, generally leading to simple Euclidean geometric patterns This principle has also proved to apply to the etching of the thinnest crystalline material, graphene, resulting in hexagonal holes with zigzag edge structures. Here we demonstrate for the first time that the graphene etching mode can deviate; significantly from simple anisotropic etching. Using an as-grown graphene film on a liquid copper surface as a model system, we show that the etched graphene pattern can be modulated from a simple hexagonal pattern to complex fractal geometric patterns with sixfold symmetry by varying the Ar/H-2 flow rate ratio: The etched fractal patterns are formed by the repeated construction of a basic identical motif, and the physical origin of the pattern formation is consistent with a diffusion-controlled process. The fractal etching mode of graphene presents an intriguing case for the fundamental study of material etching. |
| 语种 | 英语 |
| WOS记录号 | WOS:000318469100014 |
| 出版者 | AMER CHEMICAL SOC |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/42196]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Yu, Gui |
| 作者单位 | Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Geng, Dechao,Wu, Bin,Guo, Yunlong,et al. Fractal Etching of Graphene[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2013,135(17):6431-6434. |
| APA | Geng, Dechao.,Wu, Bin.,Guo, Yunlong.,Luo, Birong.,Xue, Yunzhou.,...&Liu, Yunqi.(2013).Fractal Etching of Graphene.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,135(17),6431-6434. |
| MLA | Geng, Dechao,et al."Fractal Etching of Graphene".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 135.17(2013):6431-6434. |
入库方式： OAI收割
来源：化学研究所
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