Hole mobility and conductance of iridium complex doped NPB emission layers for organic light-emitting diodes
文献类型：期刊论文
| 作者 | Wang, Ying1; Ding, Rongzheng2; Huang, Fobao3; Ma, Dongge4 |
| 刊名 | SYNTHETIC METALS
 |
| 出版日期 | 2018-10-01 |
| 卷号 | 244页码:61-65 |
| 关键词 | Hole Mobility Conductance Iridium Complex Npb Emission Layer Organic Light-emitting Diode |
| ISSN号 | 0379-6779 |
| DOI | 10.1016/j.synthmet.2018.07.005 |
| 英文摘要 | Iridium complexes are widely used in dye phosphorescent guest-host systems which usually as emission layer of efficient organic light-emitting diodes. Phosphorescent organic light-emitting diodes (OLEDs) with tris(2-phenylpyridine) iridium [Ir(ppy)(3)] as emissive dopant exhibited high internal quantum efficiency. N, N-diphenyl-N, N-bis(1-naphthylphenyl)-1,1-biphenyl-4,4-diamine (NPB) is a good candidate of host for guest-host system in OLEDs. It is significant that understanding and engineering of charge transport in Ir(ppy)(3) doped NPB films to design and optimize OLEDs, even organic lasers. In this paper, hole mobility and conductance of Ir(ppy)(3 )doped NPB films were investigated by admittance spectroscopy. The results show that for a given applied voltage, with the doping concentration increasing, the conductance first increase reaching a maximum then decrease, which indicate that light doping of NPB with Ir(ppy)(3 )weakly improves, while heavy doping deteriorates the conductivity. We found that light doping of NPB with Ir(ppy)(3) almost do not alter the hole mobility, which coincides with the previous theory. It is concluded that for films thinner than 300 nm, the electric field dependence of hole mobility is negative, that is, the mobility decrease, rather than increase, near exponentially with the square root of the electric field. |
| 语种 | 英语 |
| WOS记录号 | WOS:000444932100009 |
| 出版者 | ELSEVIER SCIENCE SA |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/43031]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Wang, Ying; Ma, Dongge |
| 作者单位 | 1.China Jiliang Univ, Coll Informat Engn, Hangzhou 310018, Zhejiang, Peoples R China 2.China Jiliang Univ, Coll Opt & Elect Technol, Hangzhou 310018, Zhejiang, Peoples R China 3.Lanzhou Univ, Sch Phys Sci & Technol, Inst Microelect, Lanzhou 730000, Gansu, Peoples R China 4.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Jilin, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Ying,Ding, Rongzheng,Huang, Fobao,et al. Hole mobility and conductance of iridium complex doped NPB emission layers for organic light-emitting diodes[J]. SYNTHETIC METALS,2018,244:61-65. |
| APA | Wang, Ying,Ding, Rongzheng,Huang, Fobao,&Ma, Dongge.(2018).Hole mobility and conductance of iridium complex doped NPB emission layers for organic light-emitting diodes.SYNTHETIC METALS,244,61-65. |
| MLA | Wang, Ying,et al."Hole mobility and conductance of iridium complex doped NPB emission layers for organic light-emitting diodes".SYNTHETIC METALS 244(2018):61-65. |
入库方式： OAI收割
来源：化学研究所
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