Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method
文献类型：期刊论文
| 作者 | Zhang, Chaohua1; Zhao, Shuli1; Jin, Chuanhong2; Koh, Ai Leen3; Zhou, Yu1; Xu, Weigao4; Li, Qiucheng1; Xiong, Qihua4; Peng, Hailin1; Liu, Zhongfan1 |
| 刊名 | NATURE COMMUNICATIONS
 |
| 出版日期 | 2015-03-01 |
| 卷号 | 6 |
| ISSN号 | 2041-1723 |
| DOI | 10.1038/ncomms7519 |
| 英文摘要 | Graphene/hexagonal boron nitride (h-BN) vertical heterostructures have recently revealed unusual physical properties and new phenomena, such as commensurate-incommensurate transition and fractional quantum hall states featured with Hofstadter's butterfly. Graphene-based devices on h-BN substrate also exhibit high performance owing to the atomically flat surface of h-BN and its lack of charged impurities. To have a clean interface between the graphene and h-BN for better device performance, direct growth of large-area graphene/h-BN heterostructures is of great importance. Here we report the direct growth of large-area graphene/h-BN vertical heterostructures by a co-segregation method. By one-step annealing sandwiched growth substrates (Ni(C)/(B, N)-source/Ni) in vacuum, wafer-scale graphene/h-BN films can be directly formed on the metal surface. The as-grown vertically stacked graphene/h-BN structures are demonstrated by various morphology and spectroscopic characterizations. This co-segregation approach opens up a new pathway for large-batch production of graphene/h-BN heterostructures and would also be extended to the synthesis of other van der Waals heterostructures. |
| 语种 | 英语 |
| WOS记录号 | WOS:000352720000009 |
| 出版者 | NATURE PUBLISHING GROUP |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/43567]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Peng, Hailin |
| 作者单位 | 1.Peking Univ, State Key Lab Struct Chem Unstable & Stable Speci, Acad Adv Interdisciplinary Studies,Ctr Nanochem, Beijing Natl Lab Mol Sci,Coll Chem & Mol Engn, Beijing 100871, Peoples R China 2.Zhejiang Univ, State Key Lab Silicon Mat, Key Lab Adv Mat & Applicat Batteries Zhejiang Pro, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China 3.Stanford Univ, Stanford Nanocharacterizat Lab, Stanford, CA 94305 USA 4.Nanyang Technol Univ, Div Phys & Appl Phys, Sch Math & Phys Sci, Singapore 637371, Singapore |
| 推荐引用方式 GB/T 7714 | Zhang, Chaohua,Zhao, Shuli,Jin, Chuanhong,et al. Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method[J]. NATURE COMMUNICATIONS,2015,6. |
| APA | Zhang, Chaohua.,Zhao, Shuli.,Jin, Chuanhong.,Koh, Ai Leen.,Zhou, Yu.,...&Liu, Zhongfan.(2015).Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method.NATURE COMMUNICATIONS,6. |
| MLA | Zhang, Chaohua,et al."Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method".NATURE COMMUNICATIONS 6(2015). |
入库方式： OAI收割
来源：化学研究所
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